The radiative recombination of isoelectronic nitrogen-doped GeP is investigated under high optical excitation at several temperatures (3" = 2, 4.2, 27, and 77 K). A previously reported phase seperation is confirmed. The parameters of the electron-hole liquid and the coexisting low-density phase are determined both from luminescence spectra and decay measurements. The dominating recombination processes for the carrier system are found to be phonon-assisted band-to-band Auger recombination, phononless radiative recombination with participation of the nitrogen impurities, and phononless Auger recombination with participation of the nitrogen impurities. The respective rate coefficients are determined.