Decapsulation technique using electrochemical etching for failure analysis of WLCSP n-type Si assembled module devices

Naoe, Takuya; Komoda, Hirotaka

doi:10.1016/j.microrel.2012.07.003

Cited by 1 publication

(1 citation statement)

References 7 publications

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“…[11][12][13] Since mold resin on the semiconductor devices significantly lowers the intensity of the optical beam, the OBIRCH method generally requires the decapsulation of the mold resin. 14) However, the decapsulation can damage the chip of the semiconductor devices, and the damage can worsen reproducibility of faults on the semiconductor devices. 15) For this reason, a nondestructive fault localization technique for metal interconnections in semiconductor devices is required to prevent the worsening effect of reproducibility.…”

Section: Introductionmentioning

confidence: 99%

Ultrasonic beam induced resistance change (SOBIRCH) method for failure analysis of semiconductor devices encapsulated by mold resin

Matsui

Tatsumi

Kawashima

et al. 2019

Jpn. J. Appl. Phys.

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In the process of the failure analysis for semiconductor devices, various optical methods are applied as techniques to localize faults of the semiconductor devices. Conventional optical techniques often require the decapsulation of the mold resin, since the mold resin is not optically transparent. As a new fault localization technique requiring no decapsulation, the authors are proposing the ultrasonic beam induced resistance change (SOBIRCH) method based on a heating by focused ultrasonic beam. In this report, the signal intensity of the SOBIRCH method for the capsulated samples was discussed through the experimental and the theoretical approaches. By comparing the experiment and the numerical analysis, it was suggested that a certain thickness of the thin mold resin can enhance the intensity of the SOBIRCH signal. Additionally, an expected effect of the standing wave in the thin mold resin was calculated, and a method to make use of the standing wave was proposed.

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