“…Apart from conversion efficiency of laser energy to EUV photons, the cleanness of the EUV LPP sources is also extremely important for their use in semiconductor lithography (Coons et al, 2010). The EUV LPP source emits debris in the form of energetic ions, atoms, and molten droplets (Wu et al, 2012). Several schemes are proposed for mitigating the ion and atom debris, which includes ambient gas, magnetic field, combination of both magnetic field and ambient gases, mass-limited targets, electrostatic repeller fields, etc.…”