Debris-free in-air laser dicing for multi-layer MEMS by perforated internal transformation and thermally-induced crack propagation

Izawa, Y.; Tanaka, Shinji; Kikuchi, H.; Tsurumi, Yosuke; Miyanaga, Noriaki; Esashi, M.; Fujita, Masayuki

doi:10.1109/memsys.2008.4443783

Cited by 12 publications

(11 citation statements)

References 5 publications

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“…Requirement (2) is also unlikely to be violated. For a pulse energy of 90 µJ, no subsurface damage could be found [17], even though this energy value is two orders of magnitude beyond the required energy to form a subsurface modification [12,13,19].…”

Section: Laser Energy Absorption In Bulk Siliconmentioning

confidence: 93%

“…This wafer dicing method is especially beneficial for the separation of sensitive devices such as microelectromechanical systems, as it is dry and debris-free [13]. For multi-layer microelectromechanical systems consisting of both silicon and glass, a combination of a nanosecond laser with a wavelength of 1064 nm to modify the silicon and a 800 nm femtosecond laser to modify the glass has been proposed [13]. Schematic overview of the process to fracture silicon wafers, using pulsed-laserinduced subsurface modifications.…”

Section: Introductionmentioning

confidence: 99%

“…Since multiphoton absorption depends on the square or higher powers of the intensity of the light, it allows for better confinement of the absorption of laser energy than can be achieved by merely focusing the beam. Recently, several authors studied the formation of subsurface modification in silicon using two-photon and three-photon absorption [9,10,17,18], in addition to studies that employed a photon energy near the band-gap of silicon [12,13,19]. The experimental conditions that were applied during these studies are listed in table 1.…”

Section: Introductionmentioning

confidence: 99%

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Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Verburg¹,

Römer²,

Veld³

2014

Opt. Express

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Three-dimensional bulk modification of dielectric materials by multiphoton absorption of laser pulses is a well-established technology. The use of multiphoton absorption to machine bulk silicon has been investigated by a number of authors using femtosecond laser sources. However, no modifications confined in bulk silicon, induced by multiphoton absorption, have been reported so far. Based on results from numerical simulations, we employed an erbium-doped fiber laser operating at a relatively long pulse duration of 3.5 nanoseconds and a wavelength of 1549 nm for this process. We found that these laser parameters are suitable to produce modifications at various depths inside crystalline silicon.

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Section: Laser Energy Absorption In Bulk Siliconmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Verburg¹,

Römer²,

Veld³

2014

Opt. Express

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“…As silicon is the material of choice for the semiconductor industry, it is of interest to further develop the subsurface modification technology for this material. One of the most successful applications of subsurface modifications in silicon is dry and nearly debrisfree wafer dicing [18,19], i.e. the separation of silicon wafers into individual dies.…”

Section: Introductionmentioning

confidence: 99%

Crystal structure of laser-induced subsurface modifications in Si

et al. 2015

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Laser-induced subsurface modification of dielectric materials is a well-known technology. Applications include the production of optical components and selective etching. In addition to dielectric materials, the subsurface modification technology can be applied to silicon, by employing near to midinfrared radiation. An application of subsurface modifications in silicon is laser-induced subsurface separation, which is a method to separate wafers into individual dies. Other applications for which proofs of concept exist are the formation of waveguides and resistivity tuning. However, limited knowledge is available about the crystal structure of subsurface modifications in silicon. In this work, we investigate the geometry and crystal structure of laser-induced subsurface modifications in monocrystalline silicon wafers. In addition to the generation of lattice defects, we found that transformations to amorphous silicon and Si-III/Si-XII occur as a result of the laser irradiation.

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“…In addition, spatio-temporal enhanced front-side ablation [11][12][13] is used when high quality cuts or precise patterns are required. For transparent materials, all of the above-mentioned techniques are applicable, and, in addition, several modification-based techniques exist: chemical etching of laser-induced bulk modifications [14][15][16][17][18][19], dicing techniques [20,21] etc. These techniques demonstrate the exceptional quality of the machined samples and very good fabrication throughput results; however, they are not applicable for all transparent materials and involve working with highly toxic chemicals.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Micromachining Process of Dielectric and Metallic Substrates Immersed in Water with Femtosecond Pulses

et al. 2015

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Abstract:Micromachining of 1 mm thick dielectric and metallic substrates was conducted using femtosecond pulse generated filaments in water. Several hundred microjoule energy pulses were focused within a water layer covering the samples. Within this water layer, non-linear self-action mechanisms transform the beam, which enables higher quality and throughput micromachining results compared to focusing in air. Evidence of beam transformation into multiple light filaments is presented along with theoretical modeling results. In addition, multiparametric optimization of the fabrication process was performed using statistical methods and certain acquired dependencies are further explained and tested using laser shadowgraphy. We demonstrate that this micromachining process exhibits complicated dynamics within the water layer, which are influenced by the chosen parameters.

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Debris-free in-air laser dicing for multi-layer MEMS by perforated internal transformation and thermally-induced crack propagation

Cited by 12 publications

References 5 publications

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Crystal structure of laser-induced subsurface modifications in Si

Analysis of the Micromachining Process of Dielectric and Metallic Substrates Immersed in Water with Femtosecond Pulses

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