de Haas-van Alphen Effect and Fermi Surface in Antimony

Abstract

The Fermi surface of antimony has been completely determined by the de Haas-van Alphen (dHvA) effect using the field-modulation measuring technique, modified to give strong dHvA period spectrometer action. The Fermi surface is found to consist of two sets of warped ellipsoids, the a set having a tilt angle of 53.0°±0.1° defined by the period maximum in the mirror plane, and the /3 set having a tilt angle of 87.7° dz0.1° (angles are measured from TT in the sense toward rX). Carrier compensation has been established with the a set of carriers consisting of 6 pockets and the /3 set of 3 pockets. When the present results are compared with the recent band-structure calculations it is clear that the a carriers are the holes and the 0 carriers the electrons. This is the reverse of the conventional assumption for the signs of the carriers in antimony. The deviation of each set of pockets from ellipsoids has been accurately determined From the ellipsoidal approximation, the carrier concentration was found to be n e = (5.54db0.05)Xl0 19 electrons/cm 3 and nh-(5.49±0.03) X10 19 holes/cm 3 . This new model removes the necessity for postulating a third band of carriers and is in agreement with all the previous experimental data. Comparison of the observed spin splitting with the electron-spin-resonance data of Datars gives new information on the angular variation of the g factor. Extra period branches have been observed along almost every field direction, but these have all been shown to arise from nonlinear mixing of strong dHvA period components.149 472

The de Haas-van Alphen effect in Sb(Sn) and Sb(Te) alloys

“…We use the hole cyclotron masses from Datars and Vanderkooy, 2 but their electron masses are somwhat uncertain, and we use Windmiller's dHvA data. 1 We next need to estimate eF for electrons and holes in this model. Using Eq.…”

de Haas—van Alphen Effect in Antimony-Tin Alloys

“…Some of the more recent work is mentioned below. Windmiller (1966) has made a complete study of the dHvA frequencies.…”

The electronic structure of a Bi/Sb superlattice nanowire

“…However, the band structure of bulk Sb in the vicinity of the Fermi surface is not so clear as that of Bi. It was once a subject of continuing discussion several decades ago due to the complicated valence band of Sb [8] and there were several different models proposed by some authors [8,9]. Here we take approximately the valence band of bulk Sb with an ellipsoidal Fermi surface of revolution about the trigonal axis, with effective mass components m x = m y =0.09m 0 , m z = 0.8m 0 at T point in the first Brillouin zone according to Ref.…”