DC triode sputtering deposition and characterization of N-rich copper nitride thin films: Role of chemical composition

Gordillo, N.; González-Arrabal, R.; Martín‐González, Marisol; Olivares, J.; Rivera, Alejandro; Briones, F.; Agulló‐López, F.; Boerma, D.O.

doi:10.1016/j.jcrysgro.2008.07.051

Cited by 45 publications

(53 citation statements)

References 27 publications

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“…More details about the deposition procedure are found in Ref. 6 The samples were separately annealed at temperatures of 100, 250, and 300°C under vacuum conditions ͑P Յ 10 −3 Pa͒ for 30 min. After finishing the heat treatments, the films were left to cool-down for 90 min before exposing them to environmental conditions.…”

Section: Methodsmentioning

confidence: 99%

“…More details about the determination of the nitrogen concentration are described elsewhere. 6,26 Since in both, RBS and non-RBS spectra, the peak associated to nitrogen is mounted on a high background related to the substrate, NRA experiments, using the nuclear reaction 14 N͑d,␣͒ 12 C, 27 were carried out in order to determine the nitrogen concentration in a more accurate way. The experiments were performed at the Institute of Ion Beam Physics and Materials Research ͑FZD͒, using a D + beam at an energy of 1.80 MeV and an implanted Si detector located at 150°to the beam direction.…”

Section: Methodsmentioning

confidence: 99%

“…Since the pioneer work by Terada et al 1 different methods have been applied to grow films with reasonable quality: molecular beam epitaxy, 2 atomic layer deposition, 3 pulsed laser deposition, 4,5 dc-triode sputtering, 6,7 and mostly rfmagnetron sputtering. [8][9][10][11][12][13][14] Copper nitride decomposes at relatively low temperature into metallic copper and nitrogen.…”

Section: Introductionmentioning

confidence: 99%

“…In fact, as in many other nitrides [19][20][21] the film stoichiometry can be tuned from nitrogen deficient to nitrogen rich, by changing deposition conditions. [6][7][8] The thermal stability of copper nitride films is a key problem for exploiting their technological potential and assuring their industrial implementation. Some studies performed so far on the thermal properties of these films have been focused on their decomposition temperature 11,22,23 whose reported values show a large dispersion from 100 ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

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Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

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The atomic composition, structural, morphological, and optical properties of N-rich copper nitride thin films have been investigated prior to and after annealing them in vacuum at temperatures up to 300°C. Films were characterized by means of ion-beam analysis ͑IBMA͒, X-ray diffraction ͑XRD͒, atomic force microscopy ͑AFM͒, and spectroscopic ellipsometry techniques ͑SE͒. The data reveal that even when the total ͑integrated over the whole thickness͒ atomic composition of the films remains constant, nitrogen starts to migrate from the bulk to the film surface, without out-diffusing, at temperatures as low as 100°C. This migration leads to two chemical phases with different atomic concentration of nitrogen, lattice parameters, and crystallographic orientation but with the same crystal structure. XRD experimental and Rietveld refined data seem to confirm that nitrogen excess accommodates in interstitial locations within the anti-ReO 3 crystal lattice forming a solid solution. The influence of nitrogen migration on the optical ͑electronic͒ properties of the films will be discussed.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

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“…Cu 3 N thin films are usually deposited by sputtering [4,5]. Being metastable [6], copper nitride easily decomposes into metallic copper and nitrogen by different techniques such as: thermal annealing [6][7][8][9], and irradiation with electrons and laser pulses [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

Gordillo

González-Arrabal

Rivera

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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Nitrogen sputtering yields as high as 10 4 atoms/ion, are obtained by irradiating N-rich-Cu 3 N films (N concentration: 33 ± 2 at.%) with Cu ions at energies in the range 10-42 MeV. The kinetics of N sputtering as a function of ion fluence is determined at several energies (stopping powers) for films deposited on both, glass and silicon substrates. The kinetic curves show that the amount of nitrogen release strongly increases with rising irradiation fluence up to reaching a saturation level at a low remaining nitrogen fraction (5-10%), in which no further nitrogen reduction is observed. The sputtering rate for nitrogen depletion is found to be independent of the substrate and to linearly increase with electronic stopping power (S e ). A stopping power (S t j,) threshold of ~3.5 keV/nm for nitrogen depletion has been estimated from extrapolation of the data. Experimental kinetic data have been analyzed within a bulk molecular recombination model. The microscopic mechanisms of the nitrogen depletion process are discussed in terms of a non-radiative exciton decay model. In particular, the estimated threshold is related to a minimum exciton density which is required to achieve efficient sputtering rates.

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Gas‐Pulsed CVD for Film Growth in the CuNiN System

Lindahl

Ottosson

Carlsson

2012

Chemical Vapor Deposition

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A new ternary solid solution, Cu 3-x Ni xþy N, is prepared by gas-pulsed CVD at 260 8C. Gas pulses of the precursor mixtures Cu(hfac) 2 þ NH 3 and Ni(thd) 2 þ NH 3 , separated by intermittent ammonia pulses, are employed for the deposition of Cu 3 N and Ni 3 N, respectively. A few monolayers of the nitrides are grown in each CVD pulse and then mixed by diffusion to produce the solid solution. The metal content of the solid solution can be varied continuously from 100% to about 20% Cu, which means that the electrical properties can be varied from 1.6 eV (band gap of Cu 3 N) to metallic (Ni 3 N). This is of interest for various applications, e.g., solar energy, catalysis, and microelectronics.

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DC triode sputtering deposition and characterization of N-rich copper nitride thin films: Role of chemical composition

Cited by 45 publications

References 27 publications

Thermal stability of copper nitride thin films: The role of nitrogen migration

Thermal stability of copper nitride thin films: The role of nitrogen migration

Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

Gas‐Pulsed CVD for Film Growth in the CuNiN System

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