DC spin generation by junctions with AC driven spin-orbit interaction

Jonson, M.; Shekhter, R. I.; Entin‐Wohlman, O.; Aharony, Amnon; Park, Hee-Chul; Radić, Danko

doi:10.1103/physrevb.100.115406

Cited by 6 publications

(5 citation statements)

References 43 publications

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“…(34) and Eq. (35). Finally, we compare the Floquet result for AC charge current with our analytical prediction both in the low and the high-frequency regimes.…”

Section: Simulating the Dynamical Spin-transistor Functionalitymentioning

confidence: 84%

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Dynamical spin-orbit-based spin transistor

et al. 2023

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Spin-orbit interaction (SOI) has been a key tool to steer and manipulate spin-dependent transport properties in two-dimensional electron gases. Here we demonstrate how spin currents can be created and efficiently read out in nano- or mesoscale conductors with time-dependent and spatially inhomogeneous Rashba SOI. Invoking an underlying non-Abelian SU(2) gauge structure we show how time-periodic spin-orbit fields give rise to spin electric forces and enable the generation of pure spin currents of the order of several hundred nano-Amperes. In a complementary way, by combining gauge transformations with “hidden” Onsager relations, we exploit spatially inhomogeneous Rashba SOI to convert spin currents (back) into charge currents. In combining both concepts, we devise a spin transistor that integrates efficient spin current generation, by employing dynamical SOI, with its experimentally feasible detection via conversion into charge signals. We derive general expressions for the respective spin- and charge conductance, covering large parameter regimes of SOI strength and driving frequencies, far beyond usual adiabatic approaches such as the frozen scattering matrix approximation. We check our analytical expressions and approximations with full numerical spin-dependent transport simulations and demonstrate that the predictions hold true in a wide range from low to high driving frequencies.

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“…(34) and Eq. (35). Finally, we compare the Floquet result for AC charge current with our analytical prediction both in the low and the high-frequency regimes.…”

Section: Simulating the Dynamical Spin-transistor Functionalitymentioning

confidence: 84%

“…Here we sketch the derivation of the expressions (34) and (35) for the AC spin/charge current using the Landauer-Büttiker formalism. We start with the charge/spin current operator.…”

Section: Spin and Charge Current Calculation In The Landauer-büttiker...mentioning

confidence: 99%

Dynamical spin-orbit-based spin transistor

et al. 2023

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“…However, the spin splitting that could facilitate the creation of polarized currents cannot, in principle, be produced by the unique action of SOC, because the system possess states with opposite spins and the same energy due to Kramer's degeneracy [16], a result of time reversal symmetry [9]. Magnetic fields, magnetic materials, and the injection of spin-polarized currents [17][18][19][20][21][22][23][24][25][26][27] or time-dependent Hamiltonians [28] have been used to break this symmetry and generate or manipulate spin-polarized currents. To obtain this result in non-magnetic materials, or without applying an external magnetic field, several systems have been proposed, such as point contact [29,30], graphene nanostructures [31], planar systems with SOC and corrugated graphene nanoribbons [32][33][34], or even creating spin-dependent chemical potentials by microwave irradiation [35].…”

Section: Introductionmentioning

confidence: 99%

Totally Spin-Polarized Currents in an Interferometer with Spin–Orbit Coupling and the Absence of Magnetic Field Effects

et al. 2022

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The paper studies the electronic current in a one-dimensional lead under the effect of spin–orbit coupling and its injection into a metallic conductor through two contacts, forming a closed loop. When an external potential is applied, the time reversal symmetry is broken and the wave vector k of the circulating electrons that contribute to the current is spin-dependent. As the wave function phase depends upon the vector k, the closed path in the circuit produces spin-dependent current interference. This creates a physical scenario in which a spin-polarized current emerges, even in the absence of external magnetic fields or magnetic materials. It is possible to find points in the system’s parameter space and, depending upon its geometry, the value of the Fermi energy and the spin–orbit intensities, for which the electronic states participating in the current have only one spin, creating a high and totally spin-polarized conductance. For a potential of a few tens of meV, it is possible to obtain a spin-polarized current of the order of μA. The properties of the obtained electronic current qualify the proposed device as a potentially important tool for spintronics applications.

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“…Coherent electronic transport in response to periodic modulations of the shape of quantum dots or of other potential parameters of mesoscopic junctions has been attracting considerable interest [17,18] following the seminal paper by Thouless [19], who showed that a slow periodic variation of the potential landscape may yield quantized and non-dissipative particle transport in unbiased junctions-a phenomenon termed "adiabatic quantum pumping". Adiabatic pumping of spin currents resulting from periodic modulations of the shape of a spinorbit coupled junction has been discussed as well [20], also as a result of temporal modulations of the Rashba interaction [21][22][23][24]. However, the possibility to induce a DC particle current by such modulations in the absence of a bias voltage was not considered.…”

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confidence: 99%

Photovoltaic effect generated by spin-orbit interactions

et al. 2020

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An AC electric field applied to a junction comprising two spin-orbit coupled weak links connecting a quantum dot to two electronic terminals is proposed to induce a DC current and to generate a voltage drop over the junction if it is a part of an open circuit. This photovoltaic effect requires a junction in which mirror reflection-symmetry is broken. Its origin lies in the different fashion inelastic processes modify the reflection of electrons from the junction back into the two terminals, which leads to uncompensated DC transport. The effect can be detected by measuring the voltage drop that is built up due to that DC current. This voltage is an even function of the frequency of the AC electric field and is not related to quantum pumping. arXiv:1911.01168v1 [cond-mat.mes-hall]

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DC spin generation by junctions with AC driven spin-orbit interaction

Cited by 6 publications

References 43 publications

Dynamical spin-orbit-based spin transistor

Dynamical spin-orbit-based spin transistor

Totally Spin-Polarized Currents in an Interferometer with Spin–Orbit Coupling and the Absence of Magnetic Field Effects

Photovoltaic effect generated by spin-orbit interactions

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