Dc Hall effect measurements on ttf-tcnq

Cooper, J. R.; Miljak, M.; Delplanque, G.; Jérôme, D.; Weger, M.; Fabre, J.M.; Giral, L.

doi:10.1051/jphys:019770038090109700

Cited by 67 publications

(33 citation statements)

References 21 publications

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“…Early measurements on the charge transfer conductors TTF-TCNQ [12] and HMTSF-TCNQ [13] gave a Hall constant R H in fair agreement with simple band theory but with some uncertainty associated with the two-band nature of these quasi-1D compounds. The situation should be clearer for the single band conductor ͑TMTSF͒ 2 PF 6 .…”

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confidence: 61%

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Hall Effect in the Normal Phase of the Organic Superconductor(TMTSF)2PF6

et al. 2000

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We report accurate Hall effect measurements performed in the normal phase of the quasi-one-dimensional organic conductor (TMTSF)2PF6 at ambient pressure. The Hall coefficient is found to be strongly temperature dependent all the way from 300 K down to the spin density wave onset arising around 12 K. These new results emphasize the existence of a high temperature regime above 130 K where the Fermi liquid model is not satisfactory.

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confidence: 61%

“…The dotted line in Fig. 1 shows the value expected from band theory with a scattering time which is constant over an open Fermi surface [12,22]. Namely,…”

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confidence: 77%

Hall Effect in the Normal Phase of the Organic Superconductor(TMTSF)2PF6

et al. 2000

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“…an expression used for the Hall constant of quasi-onedimensional compounds [7]. Considering that the t 0 !…”

Section: (Received 29 February 2000)mentioning

confidence: 99%

Reactive Hall Response

Zotos¹,

Naef²,

Long

et al. 2000

Phys. Rev. Lett.

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The zero temperature Hall constant R H , described by reactive (nondissipative) conductivities, is analyzed within linear response theory. It is found that in a certain limit R H is directly related to the density dependence of the Drude weight, implying a simple picture for the change of sign of charge carriers in the vicinity of a Mott-Hubbard transition. This novel formulation is applied to the calculation of R H in quasi-one-dimensional and ladder prototype interacting electron systems. PACS numbers: 71.27. + a, 71.10.Fd, 72.15.Gd It is now well known that in strongly correlated systems, zero temperature (T 0), the reactive part of the conductivity can be used as a criterion of a metallic or insulating ground state [1]. In particular, following the work of Kohn, the imaginary part of the conductivity, s 00 ͑v ! 0͒ 2D͞v, characterized by D (now called the "Drude weight" or charge stiffness), can be related to the ground state energy density e 0 dependence on an applied fictitious flux f as D ͑1͞2͒≠ 2 e 0 ͞≠f 2 j f!0 .A similar question is posed by the doping of an insulating state, where it would be interesting to have a simple description of the charge carriers sign as probed in a Hall experiment. For instance, we would like to describe the doping of a Mott-Hubbard insulator; within a semiclassical approach it is expected that the Hall constant R H Ӎ 11͞ed, holelike (positive) near half filling (d 1 2 n, n density), changing to R H Ӎ 21͞en, electronlike at low densities, the turning point depending on the interaction.Over the recent years, ingenious ways have been proposed [2,3] for characterizing this sign change and strongly correlated electron systems, such as the t-J model, have been studied. In particular, following the suggestion to focus on the T 0 Hall constant within linear response theory [4], the R H of a hole in the t-J model was analyzed and a numerical method was proposed for calculating the Hall response in ladder systems [5]. This activity is partly motivated by the physics of high temperature superconductors viewed as doped Mott-Hubbard insulators and related Hall measurements showing a change of the sign of carriers with doping [6].In this Letter, we show that within a certain frequency v, wave vector q limiting procedure, the T 0, v ! 0, thus "reactive" Hall constant, is simply related to the density dependence of the Drude weight. Following this point of view, we recover in a straightforward way: (i) the semiclassical expressions for R H at low density and near an insulating state, (ii) a physical picture of the sign change of carriers in the vicinity of a Mott-Hubbard transition and its dependence on interaction strength, (iii) a common expression used to describe the Hall constant in quasi-onedimensional conductors described by a band picture [7], (iv) good accord with R H for ladder systems calculated using the numerical method proposed in [5].The Hamiltonian.-In the following we will consider a generic Hamiltonian for fermions on a lattice, where for simplicity we describe the kinet...

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“…In contrast, if the electron motion is coherent and particle-like, the Hall voltage can be considered to arise through the Lorentz force on the moving charge, and is sensitive to the details of the electron dynamics. For the organic charge transfer salts it is thought that the interchain band dispersion can create small pockets of high-mobility carriers [18]. There is no indication from the band calculations that this should happen here, and this is supported by the low magnetoresistance [20].…”

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confidence: 99%

Conjugate Functions and the Restricted Denjoy Integral

Lukašenko¹

1977

Math. USSR Sb.

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We have measured the normal-state transport properties of sintered samples of YBa2CuJ0,-6 as a function of temperature and at pressures up to 8 kbar. The roomtemperature resistivity decreases at -1.0% kbar-'. The Hall coefficient has a value of 2.8 x m3 C-' just above the superconducting transition temperature. This gives an effective carrier concentration of 0.4 holes per unit cell at room temperature. In contrast to the strong temperature dependence of RH, the pressure dependence is very weak (IdRH/dP( < 1% kbar-') and we show that this is inconsistent with the temperature dependence if we assume a simple volume dependence of R,. We discuss models for the Hall coefficient and consider that its temperature dependence is determined by the low-dimensional character of the energy bands near the Fermi energy. m3 C-' at room temperature, rising to 7.8 x

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Dc Hall effect measurements on ttf-tcnq

Cited by 67 publications

References 21 publications

Hall Effect in the Normal Phase of the Organic Superconductor(TMTSF)2PF6

Hall Effect in the Normal Phase of the Organic Superconductor(TMTSF)2PF6

Reactive Hall Response

Conjugate Functions and the Restricted Denjoy Integral

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