DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass

Abdel-All, A.; Elshafie, A.; El-Hawary, M.M.

doi:10.1016/s0042-207x(00)00378-x

Cited by 18 publications

(9 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fig. 2 further confirms that the conduction mechanism in this samples is due to either Poole -Frenkel or Schottky [11][12][13]. The field dependence of the current (Fig.…”

Section: Resultssupporting

confidence: 71%

Conduction mechanisms in TlSbSe₂ chalcogenides

Kalkan

Yıldırım

Deǧer

2005

Cryst. Res. Technol.

View full text Add to dashboard Cite

TlSbSe 2 samples used for electrical measurements were cleaved from larger crystals grown by using the Bridgman -Stockbarger method. Electrical properties of the samples are investigated with a view of determining the dominant conduction mechanism. DC conduction studies reveal that Poole -Frenkel conduction is predominant. The DC conduction studies revealed the non-ohmic type conduction. The activation energies are also calculated. It is seen that the activation energy decreases with increase of applied voltage.

show abstract

“…Fig. 2 further confirms that the conduction mechanism in this samples is due to either Poole -Frenkel or Schottky [11][12][13]. The field dependence of the current (Fig.…”

Section: Resultssupporting

confidence: 71%

Conduction mechanisms in TlSbSe₂ chalcogenides

Kalkan

Yıldırım

Deǧer

2005

Cryst. Res. Technol.

View full text Add to dashboard Cite

show abstract

“…The Pool-Frenkel or Schottky effects and switching phenomena or negative resistance were reported [1,2] as a result of application of high electric field for semiconducting oxide and chalcogenide glasses such as TeO2-V205 [3], WeO2-V205-MoO3 amorphous thin films [4], and TiO2-V205-P205 [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of high electric field on the dc conduction of TeO2-V2O5-MoO3 amorphous bulk material

Souri

Elahi

2006

Czech J Phys

View full text Add to dashboard Cite

Effect of high electric field on the dc conductivity of TeO2-V2Os-MoO3 amorphous bulk samples with different molar ratio of each component was investigated with gap-type electrode arrangement. At low electric fields, the current-voltage (I-V) characteristics has a linear shape, while at high electric fields (> 103 V/cm), bulk samples show nonlinear behavior (nonohmic conduction) and current-voltage characteristics shows increasing deviation from Ohm's law with increasing current density. High-field effect of Pool-Frenkel type was observed at electrical fields about 103-104 V/cm. In addition, positive deviation from Pool-Frenkel effect was observed when a field higher than about 104 V/cm was applied.PACS: 72.15.Cz

show abstract

“…The switching behavior arises from a glass-to-crystal transition during the application of current or on heating [7][8][9]. Because of this interest, a number of papers reporting the electrical properties, photoconductivity, glass formation, structure and crystallization kinetics of Ge-As-Te glasses have appeared in the literature [10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Optical constants of quaternary Ge–As–Te–In amorphous thin films evaluated from their reflectance spectra

Aly

2009

Philosophical Magazine

View full text Add to dashboard Cite

Thin films of amorphous Ge 9 As 20 Te 71Àx In x with different compositions (x ¼ 0, 3, 6 and 9 at. %) were obtained by deposition onto glass substrates by thermal evaporation. The reflection spectra, R(), of the films were obtained in the spectral region from 400 to 2500 nm. A straightforward analysis proposed by Ruiz-Perez et al., based on the use of the maxima and minima of the interference fringes, has been applied to derive the real and imaginary parts of the complex index of refraction, the thickness and the thickness variation of the studied films. Increasing In content is found to affect the refractive index and the extinction coefficient of the films. Optical absorption measurements were used to obtain the fundamental absorption edge as a function of composition. With increasing In content, the refractive index decreases, whereas the optical band gap, E g , increases.The relationship between E g and the chemical composition of the Ge 9 As 20 Te 71Àx In x system is discussed in terms of the cohesive energy, the average heat of atomization, H s , and the average coordination number, N r .

show abstract

DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass

Cited by 18 publications

References 18 publications

Conduction mechanisms in TlSbSe₂ chalcogenides

Conduction mechanisms in TlSbSe₂ chalcogenides

Effect of high electric field on the dc conduction of TeO2-V2O5-MoO3 amorphous bulk material

Optical constants of quaternary Ge–As–Te–In amorphous thin films evaluated from their reflectance spectra

Contact Info

Product

Resources

About

DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass

Cited by 18 publications

References 18 publications

Conduction mechanisms in TlSbSe2 chalcogenides

Conduction mechanisms in TlSbSe2 chalcogenides

Effect of high electric field on the dc conduction of TeO2-V2O5-MoO3 amorphous bulk material

Optical constants of quaternary Ge–As–Te–In amorphous thin films evaluated from their reflectance spectra

Contact Info

Product

Resources

About

Conduction mechanisms in TlSbSe₂ chalcogenides

Conduction mechanisms in TlSbSe₂ chalcogenides