DC Characteristics of MOS Structures and Hopping Currents in Thermally Grown SiO2 Films

Krause, H.

doi:10.1002/pssa.2210720222

Cited by 6 publications

(4 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At lower field strengths (about 5 x 105 to 5 x lo6 Vcm-1) we could show earlier [9] that in SiO, films hopping conduction occurs.…”

Section: Physica (A) S9jlmentioning

confidence: 61%

“…The trap induction within SiO, films under electric fields can be demonstrated by some experimental results. We measured the j-F characteristics of MOS capacitors at first up to a stress field strength Fst as described earlier [9]. At F,t the sample was held for a time tSt.…”

Section: Resultsmentioning

confidence: 99%

“…Prom hopping current measurements we earlier [9] obtained results indicating trap induction within the bulk of SiO, films after external fields had been applied in the range of 7 x lo6 V/cm.…”

Section: Trap Induction and Breakdown Mechanismmentioning

confidence: 94%

“…In SiO, films thermally grown on monocrystalline silicon [9] and also in SiO, films grown on polycrystalline silicon [13] we often observed that the current density at different samples differed more or less strongly while the trap density calculated from the hopping current equation was nearly equal for the samples compared. Equation (1) has been derived with the aid of the percolation theory [14 to 161.…”

Section: Model Of Vertical and Lateral Distribution Of Deep Traps Witmentioning

confidence: 99%

See 3 more Smart Citations

Trap Induction and Breakdown Mechanism in SiO2 Films

Krause

1985

phys. stat. sol. (a)

Self Cite

View full text Add to dashboard Cite

Dielectric breakdown in SiO, films is derived from trap filling of clusters of large density of deep neutral electron traps within the interface regions of the films. The real existence of such clusters is supported by some well known experimental results about microdefects, interface region trap densities, and hopping current measurements in SiO, films. The supposed mechanism of dielectric breakdown starts with electron injection via tunnel or hopping transitions from the negative electrode into these clusters. There the trapped charge causes local internal fields which may be large enough to induce further traps. If trap induction by the local field exceeds a critical value it increases avalanche like so that local current densities pass over to the final phase of thermal breakdown. As a proof the theory derived can explain the increase of breakdown field strength with decreasing film thickness as a direct consequence. Der dielektrische Durchbruch in Si0,-Schichten wird aus der Fiillung von Clustern hoher Dichte tiefer, neutraler Elektronenhaftstellen in den Randzonen der Schichten hergeleitet. Das reale Vorhandensein solcher Cluster wird durch einige bekannte experimentelle Ergebnisse iiber Mikrodefekte, Trapdichten in Randzonen und Hoppingstrom-Messungen in Si0,-Schichten gestiitzt. Der angenommene Mechanismus des dielektrischen Durchbruchs wird durch Elektroneninjektion auf dem Wege von Tunnel-oder Hoppingiibergangen von der negativen Elektrode in diese Cluster eingeleitet. Dort fiihrt die getrappte Ladung zu lokalen inneren Feldern, die stark genug sein konnen um weitere Haftstellen zu induzieren. Wenn diese Induktion von Haftstellen durch das lokale Feld einen kritischen Wert iibersteigt, wachst sie lawinenartig an, so da13 die lokalen Stromdichten in die Endphase des thermischen Durchbruchs iibergehen. Als Priifung ihrer Tragfahigkeit kann die entwickelte Theorie die Zunahme der Durchbruchfeldstarke mit abnehmender Schichtdicke als direkte Konsequenz erklaren.

show abstract

“…At lower field strengths (about 5 x 105 to 5 x lo6 Vcm-1) we could show earlier [9] that in SiO, films hopping conduction occurs.…”

Section: Physica (A) S9jlmentioning

confidence: 61%

Section: Resultsmentioning

confidence: 99%

Section: Trap Induction and Breakdown Mechanismmentioning

confidence: 94%

Section: Model Of Vertical and Lateral Distribution Of Deep Traps Witmentioning

confidence: 99%

See 2 more Smart Citations