DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess

Abstract

A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current(I dss), an extrinsic transconductance(g m) of 1,090 mS/mm and a threshold voltage(V th) of −0.65 V. The f T and f max obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs).