1986
DOI: 10.1063/1.96603
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dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor

Abstract: Extremely large current double interface GaAs/In0.15 Ga0.85 As/Al0.15 Ga0.85 As pseudomorphic modulation-doped field-effect transistors (MODFET’s) grown by molecular beam epitaxy were achieved. The 1-μm gate devices studied have peak current levels (430 mA/mm at 300 K and 483 mA/mm at 77 K) roughly one and a half to two times that found in single interface pseudomorphic MODFET’s. These devices also retain high transconductances over a broad range of gate voltage, peaking at 312 mS/mm at 300 K and 362 mS/mm at … Show more

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Cited by 23 publications
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