Abstract:Extremely large current double interface GaAs/In0.15 Ga0.85 As/Al0.15 Ga0.85 As pseudomorphic modulation-doped field-effect transistors (MODFET’s) grown by molecular beam epitaxy were achieved. The 1-μm gate devices studied have peak current levels (430 mA/mm at 300 K and 483 mA/mm at 77 K) roughly one and a half to two times that found in single interface pseudomorphic MODFET’s. These devices also retain high transconductances over a broad range of gate voltage, peaking at 312 mS/mm at 300 K and 362 mS/mm at … Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.