DC and low frequency noise performances of SOI p-FinFETs at very low temperature

Abstract

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Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

“…Finally, (16) also shows that for a given W t , multigate architectures can still improve SS bt at deepcryogenic temperatures, to a certain extent, by enhancing the electrostatic control over the channel and so reducing m. Summing up the previous discussion, the subthreshold slope of the FET at deep-cryogenic temperatures will be worse when there is a band tail in the bandgap which decays gently (small a) and over a large energy window (large W t ) toward the middle of the bandgap. For completeness, and as a third approximation of (13), we also write down (17), a further simplification of (15) when T (E) in (9) is a pure exponential (a = e = exp 1):…”

“…In practice, SS bt in (13) can thus serve as a good approximation for (19). Depending on the required accuracy around T crit , (14), (15), or (17) are preferred over (13).…”

“…8 As shown in Fig. 1, this degradation is measured in structurally different FETs, operating in subthreshold at both low and high drain-to-source voltage, V DS , and among various technology nodes: mature and advanced bulk and FDSOI MOSFETs, [4][5][6][7][8][9][10][11][12][13][14] FinFETs, 15,16 gate-all-around Si nanowires, 17 junctionless nanowires, 18,19 SiGe FETs, 20 InP HEMTs, 21 SiC FETs, 22 to name a few. Fig.…”

Direct assessment of solid–liquid interface noise in ion sensing using a differential method

“…This EDL noise is further found to be larger than the FET noise of the state-of-the-art MOSFET technologies. [16][17][18] The microelectrode cell schematically shown in Fig. 1 was fabricated using standard Si technology.…”

“…3 with the area-normalized input-referred noise of several state-of-the-art MOSFETs. [16][17][18] The comparison is made at 1 Hz and 10 Hz, and includes different combinations of KCl concentration and pH value for the TiN electrode. It is apparent that the EDL noise is comparable or even higher than that of the reported advanced MOSFETs and cannot be neglected.…”