DC and Large-Signal Microwave MOSFET Model Applicable to Partially-Depleted, Body-Contacted SOI Technology

Burke, Dearbhla; Kaamouchi, M. El; Vanhoenacker‐Janvier, Danielle; Brazil, T.J.

doi:10.1109/mwsym.2007.380558

Cited by 5 publications

(7 citation statements)

References 9 publications

(15 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…One approach to overcoming this problem is through using a segmented channel representation based on Equations (1) and (2). This has been shown to work successfully well into millimetre wave in static, small-signal and highly non-linear operations [8].…”

Section: Circuit-level Modelling Of High-frequency Transistorsmentioning

confidence: 98%

“…For example, motivated by detailed physical modelling we have found a compact single-function formulation that works very well for bulk and SOI RF MOS devices [8].…”

Section: Circuit-level Modelling Of High-frequency Transistorsmentioning

confidence: 99%

“…Various controlling laws relating Q n (y, t) to the gate voltage and other parameters may be developed depending on the physics of a particular device. For example, motivated by detailed physical modelling we have found a compact single-function formulation that works very well for bulk and SOI RF MOS devices [8].…”

Section: Circuit-level Modelling Of High-frequency Transistorsmentioning

confidence: 99%

“…1. Remove the additional phase shift introduced by the exponential term in Equation (8). This corresponds to shifting the entire response in Figure 6(a) by an amount to the left, i.e.…”

Section: Linear Transient Simulation With Frequency-domain Datamentioning

confidence: 99%

See 3 more Smart Citations

The modelling and simulation of high‐frequency electronic circuits

Brazil¹

2007

Circuit Theory & Apps

View full text Add to dashboard Cite

SUMMARYThis paper provides an overview of progress in selected topics related to the modelling and simulation of high-frequency electronic circuits. There are several specific features of this regime that distinguish it from more conventional electronic analysis; however, here we will just emphasize two: firstly, the durable value, and yet the intrinsic limitations, of the circuit paradigm in representing the physical behaviour of highfrequency electronic devices, and secondly, the challenge of efficiently representing frequency-domain linear data in general non-linear transient simulation.

show abstract

Section: Circuit-level Modelling Of High-frequency Transistorsmentioning

confidence: 98%

“…For example, motivated by detailed physical modelling we have found a compact single-function formulation that works very well for bulk and SOI RF MOS devices [8].…”

Section: Circuit-level Modelling Of High-frequency Transistorsmentioning

confidence: 99%

Section: Circuit-level Modelling Of High-frequency Transistorsmentioning

confidence: 99%

“…1. Remove the additional phase shift introduced by the exponential term in Equation (8). This corresponds to shifting the entire response in Figure 6(a) by an amount to the left, i.e.…”

Section: Linear Transient Simulation With Frequency-domain Datamentioning

confidence: 99%

See 2 more Smart Citations

The modelling and simulation of high‐frequency electronic circuits

Brazil¹

2007

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…10 The term PD or fully depleted refers to the "distance" the depletion region under the gate extends into the body. There are 2 types of transistors, ie, floating body (FB) 11 or body-contacted (BC) 12 FET, in the PD SOI process. The body of the FB FET is floating, while the body of a BC FET may be connected to a voltage supply or source/ground.…”

mentioning

confidence: 99%

A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

Zhang

et al. 2018

Circuit Theory & Apps

View full text Add to dashboard Cite

A low-loss high-power single-pole 8-throw antenna switch adopting body self-adapting bias technique in a 0.18-μm thick-film partially depleted silicon-on-insulator complementary metal-oxide-semiconductor process is implemented for multimode multiband cellular applications. A topology with symmetric port design is developed. We employ the body-contacted field-effect transistor to handle high power level and obtain low harmonic distortion. However, the conventional bias method for body-contacted field-effect transistor leads to poor insertion loss (IL), serious imbalanced voltage division, and large die size. Therefore, a new body self-adapting bias scheme is adopted to improve the IL and power handling capability with die area reward by removing the employment of extra biasing resistor and voltage supply at the body. The presented silicon-on-insulator antenna switch utilizing the new body bias strategy reveals similar harmonic performance as a conventional switch version, thanks to the analogous DC bias to the gate and body, while it exhibits effectively lower IL, imbalanced voltage division, and die area. The measured IL and 0.1-dB compression point (P −0.1dB ), at 1.9/2.7 GHz, are roughly 0.52/0.82 dB and 39.2/36.9 dBm, respectively. The overall IL and P −0.1dB are apparently improved by approximately 0.05 to 0.13 dB and 0.5 to 0.8 dBm compared with the conventional version.

show abstract

Effects and contrasts of silicon‐on‐insulator floating‐body and body‐contacted field‐effect transistors to the design of high‐performance antenna switches

Zhang

et al. 2016

IET Microwaves, Antennas & Propagation

View full text Add to dashboard Cite

A theoretical analysis and contrast of silicon‐on‐insulator (SOI) floating‐body (FB) and body‐contacted (BC) metal–oxide–semiconductor field‐effect transistors (FETs) including insertion loss (IL), isolation, power handling capability as well as harmonics for radio frequency switches applications, are firstly developed in detail. From the presented investigation, lower IL and smaller chip size can be obtained using FB FETs, while the BC devices are beneficial to isolation and harmonics improvement. As an experimental vehicle for the presented analysis, the high‐power single‐pole eight‐throw (SP8T) antenna switches for multi‐mode multi‐band applications, are fabricated in a partially depleted 0.18 μm SOI process based on FB and BC FETs, respectively. At 1.9 GHz, the tested IL, TR × 1 to TR × 3 isolation, and P−0.1 dB of the FB and BC SP8T switches are approximately 0.53/0.65 dB, 27.6/29.3 dB and 38.0/38.4 dBm. For the two cases, the second and third harmonics are −70.6/−75.5 and −60.4/−79.9 dBc, respectively, with a +33 dBm input power at 1.9 GHz. The experimental results strongly support the analysis that the FB FET is a preferred device in low loss or low throw‐count switching design while the BC FET is a better selection in the applications that demand high power and low harmonic.

show abstract

DC and Large-Signal Microwave MOSFET Model Applicable to Partially-Depleted, Body-Contacted SOI Technology

Cited by 5 publications

References 9 publications

The modelling and simulation of high‐frequency electronic circuits

The modelling and simulation of high‐frequency electronic circuits

A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

Effects and contrasts of silicon‐on‐insulator floating‐body and body‐contacted field‐effect transistors to the design of high‐performance antenna switches

Contact Info

Product

Resources

About