DC and high-frequency conductivity of CuInSe2 bulk crystals

Benabdeslem, M.; Benslim, N.; Bechiri, L.; Mahdjoubi, L.; Djekoun, A.; Otmani, A.; Nouet, G.; Theobald, Jean‐Gérard; Fromm, M.

doi:10.1016/j.tsf.2006.12.111

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2014

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“…Zn content (in the bulk of each CuInSe 2 piece) was measured along the thickness of the samples. The conduction type and the material conductivity were determined by respectively, the thermal probe method and the high frequency technique (HF) in a contactless way based on microwave resonance cavity (Gire et al 1997;Gevrey et al 2001;Benabdeslem et al 2007).…”

Section: Methodsmentioning

confidence: 99%

Zn incorporation in CuInSe2: Particle size and strain effects on microstructural and electrical properties

et al. 2014

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International audienceIncorporation of the doping element Zn in the temperature range (550–700 °C) and the impact on structural and electrical properties of CuInSe2 material are investigated. X-ray diffraction patterns showed the chalcopyrite nature of the pure and doped CuInSe2 and revealed that diffusion temperature governs particle size as well as tensile strain. The calculated lattice parameters and cell volumes revealed that Zn diffuses in CuInSe2 by substitution on Cu sites. Electrical properties of the material have been investigated using a contact-less technique based on high frequency microwave (HF). It is found that Zn atoms influence the defect equilibrium resulting in the conversion of the conduction type. The conductivity of the samples has been found increasing as the diffusion temperature increases

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Section: Methodsmentioning

confidence: 99%