DC and Analog/RF Performance Analysis of Multi-Bridge Channel FET with Variation in Gate Work Function

Yadav, Nisha; Jadav, Sunil; Saini, Gaurav

doi:10.1109/iconat53423.2022.9726102

Cited by 3 publications

(1 citation statement)

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“…The device has shown excellent results, including a high saturation current of 174.9 µA, an ideal SS of 63 mV/dec, and a switching ratio exceeding 10 8 . Yadav et al in 2022 [145] studied the effect of work-function (WF) variation on the DC/RF performance of GAA MBCFET. It is noticed from the results that varying the gate WF from 4.4 eV to 4.8 eV greatly reduces the OFF-current (I OF F ) by 99%, of the device.…”

Section: Gate All Around Multi-bridge Channel Field Effect Transistor...mentioning

confidence: 99%

FinFET to GAA MBCFET: A Review and Insights

Das,

Rajalekshmi,

James

2024

IEEE Access

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This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling the evolution of semiconductor architectures. This article provides a concise yet insightful overview of the development of FinFET, exploring modified architectures, current trends, and associated constraints. The growing importance of other semiconductor materials instead of Si in FinFET or other technologies has been studied in detail. The article explores an emerging technology called 'GAA MBCFET', highlighting its advantages over FinFET. It also delves into the notable drawbacks and complex fabrication challenges associated with the upcoming GAA MBCFET technology. INDEX TERMS Gate-All-Around (GAA), Multi-Bridge Channel (MBC), Silicon on Insulator (SOI)

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Section: Gate All Around Multi-bridge Channel Field Effect Transistor...mentioning

confidence: 99%