DC and ac electrical properties of the chalcogenide semiconductor Se0.9In0.1

El-Hakim, S. A.; Elwahab, F. Abd; Mohamed, Azizah; Kotkata, M. F.

doi:10.1002/pssa.200305959

Cited by 28 publications

(12 citation statements)

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“…In particular, the presence of traps created by the defects, in the semiconductor, will be captured thereby immobilize a portion of the injected carriers, thus controlling the carrier flow and determining the actual form of the current-voltage (I-V) characteristics. The latter is strongly dependent on the concentration and distribution function of traps inside the specimen [10,28].…”

Section: Space-charge-limited Current (Sclc)mentioning

confidence: 99%

“…El-Hakim et al [10] studied SCLC parameters of In 0.1 Se 0.9 thin films in a narrow temperature range of 288 -303 K. There are a few reports on variable range hopping (VRH) and thermal conduction mechanisms for InSe film in the temperature range 77 -300 K [11][12][13]. Parlak et al [2] studied the thermionic emission on polycrystalline InSe films in the temperature range of 220 -320 K. SCLC conduction mechanism in In 13 Se 87 and In 20 Se 80 thin films was discussed by El-Sayed [14].…”

Section: Introductionmentioning

confidence: 98%

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Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Viswanathan

Senthilkumar

Sriranjini

et al. 2005

Cryst. Res. Technol.

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Thin films of InSe were obtained by thermal evaporation techniques on glass substrates maintained at various temperatures (T sb = 30°, 400°C). X-ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature (400°C). The polycrystalline films were found to have a hexagonal lattice. Compositions of these films have been characterized by EDAX and the surface analysis by scanning electron microscopy. Optical properties of the films, investigated by using spectrophotometer transmittance spectra in the wavelength range (300 -1100 nm), were explained in terms of substrate temperatures. Films formed at room temperature showed an optical band gap (E g opt ) 1.56 eV; where as the films formed at 400°C were found to have a E g opt of 1.92 eV. The increase in the value of E g opt with T sb treatment is interpreted in terms of the density of states model as proposed by Mott and Davis. The analysis of current -Voltage characteristics, based on space charge limited currents (SCLC) measurements, confirms the exponential decrease of density of states from the conduction band edge towards the Fermi level for both the amorphous and polycrystalline films.

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Section: Space-charge-limited Current (Sclc)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Viswanathan

Senthilkumar

Sriranjini

et al. 2005

Cryst. Res. Technol.

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“…It should be noted that the temperature range of the measurements could not be extended in both temperature sides. This is attributed to the relatively low value of a-Se 0.82 In 0.18 glass transition temperature T g (T g ∼ 330 K, [1,16,17]) on one side, and the high resistivity of a-Se 0.82 In 0.18 on lowering T on the other side. A voltage source of type Keithley 228A was used in the 1 V range, with a resolution of 1 mV.…”

Section: Methodsmentioning

confidence: 89%

Fabrication and electrical characterization of thermally deposited amorphous Se0.82In0.18 on n-Si (100)

Kotkata

Mansour

2012

Appl. Phys. A

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Amorphous (a-) Se 0.82 In 0.18 thin films have been deposited onto n-type silicon (n-Si) single crystal, using the three-temperature technique, in the fabricated configuration of Au/a-Se 0.82 In 0.18 /n-Si/Al. The current densityvoltage (J -V ) characteristics have been measured at different isotherms in the range of 198-313 K, thus inspecting the conduction mechanisms comparing with Au/a-Se/nSi/Al heterojunctions. The analysis proved that the forward bias is characterized by two parts: current increasing exponentially with the applied voltage (low voltage bias region, V < 0.2 V), and non-exponentially in the higher voltage region (V > 0.2 V). At the low bias region, the current was dominated by a multi-tunneling capture-emission process with a rather temperature-independent effect in the temperature range investigated. However, at the high voltage region, the effect of temperature becomes more pronounced with an ohmic character in the range of 198 to 273 K. For temperatures higher than 273 K, and below the glass transition temperature of a-Se 0.82 In 0.18 (T g ∼ 330 K), the high voltage region could be subdivided into two parts: an ohmic conduction range that limited at bias voltage of 0.20 V < V < 0.46 V, and a space charge limited current region for bias voltage of V > 0.46 V. The reverse J -V characteristics showed a deviation from that of the ideal diode behavior, analogous to that of pure a-Se/n-Si heterojunctions.

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“…In the present case slightly higher values of "s" than the unity has been noticed which are typically observed in chalcogenide materials. 32 It is expected that the higher values of "s" are the indicative of more complicated frequency dependent behavior of the conductivity. Accordingly, it is likely that frequency dependence of conductivity is following the double power law behaviour…”

Section: Resultsmentioning

confidence: 99%

Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

et al. 2014

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We report the structural, dielectric and leakage current properties of Co doped MgTiO3 thin films deposited on platinized silicon (Pt/TiO2/SiO2/Si) substrates by RF magnetron sputtering. The role of oxygen mixing percentage (OMP) on the growth, morphology, electrical and dielectric properties of the thin films has been investigated. A preferred orientation of grains along (110) direction has been observed with increasing the OMP. Such evolution of the textured growth is explained on the basis of the orientation factor analysis followed the Lotgering model. (Mg1-xCox)TiO3 (x = 0.05) thin films exhibits a maximum relative dielectric permittivity of ɛr = 12.20 and low loss (tan δ ∼ 1.2 × 10−3) over a wide range of frequencies for 75% OMP. The role of electric field frequency (f) and OMP on the ac-conductivity of (Mg0.95Co0.05)TiO3 have been studied. A progressive increase in the activation energy (Ea) and relative permittivity ɛr values have been noticed up to 75% of OMP, beyond which the properties starts deteriorate. The I-V characteristics reveals that the leakage current density decreases from 9.93 × 10−9 to 1.14 × 10−9 A/cm2 for OMP 0% to 75%, respectively for an electric field strength of 250 kV/cm. Our experimental results reveal up to that OMP ≥ 50% the leakage current mechanism is driven by the ohmic conduction, below which it is dominated by the schottky emission.

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DC and ac electrical properties of the chalcogenide semiconductor Se0.9In0.1

Cited by 28 publications

References 0 publications

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films

Fabrication and electrical characterization of thermally deposited amorphous Se0.82In0.18 on n-Si (100)

Structural and dielectric studies of Co doped MgTiO3 thin films fabricated by RF magnetron sputtering

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