DC and AC electrical characteristics of porous GaAs/p+–GaAs heterostructure

Béji, Lotfi; Jomaa, T. Ben; Harrabi, Z.; Laribi, A.; Missaoui, A.; Bouazizi, Abdelaziz

doi:10.1016/j.vacuum.2005.08.024

Cited by 18 publications

(1 citation statement)

References 25 publications

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“…A mesoporous layer with low porosity at the surface of the substrate is used as a seed layer for the Si epitaxy, while a buried highly porous layer is used as a pre‐determined breaking‐point. The formation of porous GaAs has been extensively studied 7–17, specially in n‐type substrates. Porous GaAs can be obtained by means of electrochemical etching in H 2 SO 4 7, 8, HCl 9, 10, and in HF (hydrofluoric acid) 11–17.…”

Section: Introductionmentioning

confidence: 99%

Mesoporous GaAs double layers for layer transfer processes

Rojas

Terheiden

Plagwitz

et al. 2009

Physica Status Solidi (a)

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Mesoporous GaAs double layers with different porosities and thicknesses up to 7 µm are formed on highly doped p‐type 4 inch GaAs substrates by means of electrochemical etching in highly concentrated hydrofluoric acid electrolytes. Small 〈111〉 oriented pyramids form at the interface between porous layer and substrate if etching current densities below 7.5 mA cm−2 are applied. Porous double layers with different porosities are obtained by varying simultaneously the etching current density and the electrolyte concentration. The porosity of the porous GaAs layers decreases nearly linearly from 69 to 53% with electrolyte concentrations increasing from 30 to 50 wt.%, respectively. The etching process increases the mean roughness of the porous layer surface from 0.15 to 0.24 nm.

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