DC-40 GHz and 20-40 GHz MMIC SPDT Switches

Schindler, Fred; Morris, A.M.

doi:10.1109/mcs.1987.1114521

Cited by 13 publications

(11 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The -band switch demonstrated a measured on-state insertion loss of less than 4 dB with an off-state isolation of better than 30 dB from 53 to 61 GHz. The measured isolation results outmatch the reported -and -band MMIC passive FET switches [4]- [6], [11]- [13] with slightly higher on-state insertion losses.…”

Section: Introductionsupporting

confidence: 55%

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

Lin

Wang

Niu

et al. 2003

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

This paper proposes a new design method for passive FET switches in the millimeter-wave (MMW) regime. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off state at high frequencies. By means of this new design concept, aand -band monolithic-microwave integrated-circuit single-pole double-throw (SPDT) switches using a GaAs pseudomorphic high electron-mobility-transistor process are demonstrated. The -band SPDT switch has a measured isolation better than 30 dB for the off state and 2-dB insertion loss for the on state from 38 to 45 GHz, while the -band switch also shows a measured isolation better than 30 dB for the off state and 4-dB insertion loss for the on state from 53 to 61 GHz. The obtained isolation performance using this design approach outmatches previously published FET switches in the MMW frequency range.Index Terms-High electron-mobility transistor (HEMT), millimeter wave (MMW), monolithic microwave integrated circuit (MMIC), switch.

show abstract

Section: Introductionsupporting

confidence: 55%

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

Lin

Wang

Niu

et al. 2003

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…Several switches based on loaded transmission lines (including travelling-wave and distributed switches) have been presented previously in the literature. 2,[6][7][8][9] In this work, a shuntloaded transmission is realized using a transmission line and two shunt HEMT devices. The shunt devices add capacitive loading to the transmission line, ensuring that a 50 X overall characteristic impedance is achieved.…”

Section: S P Dt S W I Tch Des I Gnmentioning

confidence: 99%

A ku‐band distributed SPDT switch in 0.5 μm AlGaN/GaN HEMT technology

Zaibet

Hettak

Yagoub

2018

Micro & Optical Tech Letters

View full text Add to dashboard Cite

In this paper, a wideband single‐pole double‐throw (SPDT) switch using the traveling‐wave concept was demonstrated. Realized in 0.5 μm AlGaN/GaN HEMT process, it achieves good performance at Ku‐band despite the process being intended for low‐frequency applications. This type of switch combined the off‐state shunt transistors and series coplanar waveguide (CPW) lines to form an artificial transmission line. CPW is also used to eliminate parasitics associated with through‐substrate microstrip vias and coupling of adjacent transmission lines. An accurate switch HEMT model was extracted and used in the design. A 9–25 GHz single‐pole double‐throw (SPDT) switch in conjunction with quarter‐wavelength impedance transformers demonstrates an insertion loss of less than 6 dB, return loss better than 10 dB and an isolation of better than 25 dB.

show abstract

“…Several techniques have been developed and exploited to design passive FET switches up to millimeter-wave frequency band [6][7][8][9]. Among them, the traveling-wave concept has been demonstrated and analyzed to design switches up to 110 GHz [8].…”

Section: Design Approachmentioning

confidence: 99%

High power GaN-HEMT SPDT switches for microwave applications

Bettidi

Cetronio

Ciccognani

et al. 2009

Int J RF and Microwave Comp Aid Eng

View full text Add to dashboard Cite

In this article, the design, fabrication, and on-wafer test of X-Band and 2-18 GHz wideband high-power SPDT MMIC switches in AlGaN/GaN technology are presented. The switches have demonstrated state-of-the-art performance and RF fabrication yield better than 65%. Linear and power measurements for different control voltages have been reported and an explanation of the dependence of the power performances on the control voltage is given. In particular, the X-band switch exhibits a 0.4 dB compression level at 10 GHz when driven by a 38 dBm input signal. The wideband switch shows a compression level of 1 dB at an input drive higher than 38 dBm across the entire bandwidth.

show abstract

DC-40 GHz and 20-40 GHz MMIC SPDT Switches

Abstract: MonolithicGaAs SPDT switches operating from dc to 40 GHz and 20 to 40 GHz have been demonstrated. The switches use MESFETS with the same characteristics as a mm-wave amplifier to allow for ease of integration in the future.

Cited by 13 publications

References 1 publication

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

A ku‐band distributed SPDT switch in 0.5 μm AlGaN/GaN HEMT technology

High power GaN-HEMT SPDT switches for microwave applications

Contact Info

Product

Resources

About