Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID

Kobayashi, Daisuke; Mori, Y.; Matsuura, Daisuke; Kusano, Masaki; Narita, Takanori; Ishii, Shigeru; Hirose, Kazuyuki; Sakamoto, Kazumitsu; Okamoto, Shogo; Baba, Shigeo; Shindou, H.; Kawasaki, Osamu; Makino, Takahiro; Ohshima, Takeshi

doi:10.1109/tns.2019.2956760

Cited by 12 publications

(6 citation statements)

References 51 publications

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“…Kobayashi et al [7] and Cannon et al [10] demonstrated that V DR enables one to extract a zero-time variation in σ between cells due to inherent variability in the fabrication process. Kobayashi et al [6] showed its usefulness in monitoring and canceling a gradual postfabrication change in σ due to total ionizing dose (TID) fatigue [6]. The convergence observed in Fig.…”

Section: A Derivation From Findings In Our Previous Studymentioning

confidence: 97%

“…Fig. 1 shows the starting material for modeling, which was reported in our previous silicon-on-insulator (SOI) SRAM study [6], [7]. The part examined here consists of a standard SRAM cell based on a 65-nm process, not supported by radiation hardening by design (RHBD).…”

Section: A Derivation From Findings In Our Previous Studymentioning

confidence: 99%

Section: A Derivation From Findings In Our Previous Studymentioning

confidence: 99%

“…assuming a constant β under various L and V DD conditions as well as [6], where C L and γ represent the load capacitance of the internal node and the circuit loading effect, respectively (Fig. 4).…”

Section: A Derivation From Findings In Our Previous Studymentioning

confidence: 99%

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An SRAM SEU Cross Section Curve Physics Model

Kobayashi

Hirose

Sakamoto

et al. 2022

IEEE Trans. Nucl. Sci.

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Static random access memories (SRAMs) are prone to a single-event upset (SEU), also known as soft errors, due to transient noise caused by a single strike of radiation. Beam testing has been extensively used to measure the SEU cross section of SRAMs as a function of the linear energy transfer (LET) of charged particle radiation. The evolution of the cross section as a function of LET is called the cross section curve, which plays a vital role in upset rate analysis for hardness assurance. Various analytical models have been developed to describe SRAM SEU cross section curves, and they have proven to be useful in reducing the cost of beam testing as well as revealing the physics behind test results. However, they involve arbitrary parameters, which make it challenging to predict cross section curves without any beam results. Moreover, the current method of analyzing cross section curves or the LET dependence of cross sections relies on a model different from that is used in the analysis of power-supplyvoltage dependence, which is becoming increasingly important because of the demand for low-power operation. To overcome these problems, this article proposes a unified equation that describes both LET and the power-supply-voltage dependence of SRAM SEU cross sections. It comprises only parameters that are physically clear and familiar to SEU researchers. As well as giving possible constraints, comparisons with data from the literature suggest it can be applied to SRAMs fabricated in bulk and silicon-on-insulator (SOI) processes across generations from the early 1000-nm-scale to the current 10-nm-scale technology nodes.

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Section: A Derivation From Findings In Our Previous Studymentioning

confidence: 97%

Section: A Derivation From Findings In Our Previous Studymentioning

confidence: 99%

Section: A Derivation From Findings In Our Previous Studymentioning

confidence: 99%

Section: A Derivation From Findings In Our Previous Studymentioning

confidence: 99%

See 2 more Smart Citations

An SRAM SEU Cross Section Curve Physics Model

Kobayashi

Hirose

Sakamoto

et al. 2022

IEEE Trans. Nucl. Sci.

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“…SRAM σ measured under various L and V DD conditions were supposed to converge on the point P where V DD = V DR . Measurement data were taken from heavy-ion tests with the 65-nm SOI SRAM [12], [15].…”

Section: Review Of the Original Derivationmentioning

confidence: 99%

Threshold and Characteristic LETs in SRAM SEU Cross Section Curves

Kobayashi

Uematsu

Hirose

2023

IEEE Trans. Nucl. Sci.

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Characterizing the sensitivity of a static random access memory (SRAM) to single-event upset (SEU) is an essential task for assuring its soft-error reliability. However, this task often imposes a burden because it usually requires many cycles of accelerator-based irradiation tests. A model recently proposed is a very simple exponential-type equation but has strong potential to reduce the burden because of its capability to predict SEU cross sections in various conditions. The aim of the present study is to revisit the model in terms of threshold parameters called threshold linear energy transfer (LET) and critical charge. Although these threshold parameters are widely used as key parameters that describe whether an SEU occurs or not, they are not seen in the model. This article explores such missing threshold parameters, suggesting that they successfully appear by introducing a factor of five to the original expression.

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