“… 37 , 38 Indeed, ML has been instrumental in accelerating the prediction of properties related to point defects and dopants in materials. This includes predicting vacancy formation and substitutional energies of oxides using regression algorithms applied on DFT data, 39 , 40 , 41 , 42 ML formation energies, transition levels, and the migration energies of point defects in known semiconductors and alloys, 43 , 44 predicting the dopability of semiconductors, 45 and improving high-fidelity predictions of point defect properties using previously unknown correlations. 46 Recent work from our group involved performing high-throughput DFT computations to study the formation energies and charge transition levels of impurities in halide perovskites 3 and Cd-chalcogenides, 12 following which ML models were trained for the prediction and screening of impurity atoms that can shift the equilibrium Fermi level as determined by dominant native defects.…”