Data Base on the Specimens and Materials in Nagoya University Museum

Nagai, Hiromi

doi:10.6010/geoinformatics1975.1984.9_39

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2007

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“…However, performance control by this method has limitations, and the results obtained using conventional parameters will not yield scientific information. Figure 3 shows our proposed concept of a next-generation smart etching process with precise control (3,4). In order to perform highly precise etching, it is necessary to carry out real time monitoring of the internal plasma parameters such as electron density and temperature, radical and ion density.…”

Section: Introductionmentioning

confidence: 99%

Plasma Etching Technology for Low-k Porous SiOCH Films

Hori

2007

ECS Trans.

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An environmental friendly gas, C5F10O, has been proposed for etching low-k SiOCH films using dual frequency (60MHz/2MHz) capacitively coupled plasma. The main ion produced is CF3+, as compared to CF+ produced by the conventional c-C4F8 gas. The advantage of CF3+ over CF+ is the much higher etching rate. With the new etching gas, a high etching rate of about 1000 nm/min with a vertical profile pattern can be achieved. The damage to SiOCH films induced by light, radicals and ions were systematically evaluated. It was found that the most severe damage was caused by ions, followed by VUV. The resist materials can be selectively removed with respect to SiOCH with less damage by employing an O2/Ar surface wave excited plasma. An advanced plasma etching technology with controlled radicals has thus been introduced.

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Section: Introductionmentioning

confidence: 99%

Plasma Etching Technology for Low-k Porous SiOCH Films

Hori

2007

ECS Trans.

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Data Base on the Specimens and Materials in Nagoya University Museum

Cited by 1 publication

References 0 publications

Plasma Etching Technology for Low-k Porous SiOCH Films

Plasma Etching Technology for Low-k Porous SiOCH Films

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