1997
DOI: 10.1109/16.628819
|View full text |Cite
|
Sign up to set email alerts
|

Dark current fixed pattern noise reduction for the 2/3-in two-million pixel HDTV STACK-CCD imager

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2014
2014
2017
2017

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(3 citation statements)
references
References 9 publications
0
3
0
Order By: Relevance
“…In this simulation, the photo‐response nonuniformity noise (systematic spatial variation in pixel efficiency) and the dark current fixed pattern noise (systematic spatial variation in dark current) are not considered as they are small compared with the noises involved. These effects are caused by pixel manufacturing defects, such as surface defects at the SiO 2 /Si interface and randomly distributed discrete charge generation centers . The parameters used in the photon sensor model are given in Table .…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…In this simulation, the photo‐response nonuniformity noise (systematic spatial variation in pixel efficiency) and the dark current fixed pattern noise (systematic spatial variation in dark current) are not considered as they are small compared with the noises involved. These effects are caused by pixel manufacturing defects, such as surface defects at the SiO 2 /Si interface and randomly distributed discrete charge generation centers . The parameters used in the photon sensor model are given in Table .…”
Section: Methodsmentioning
confidence: 99%
“…These effects are caused by pixel manufacturing defects, such as surface defects at the SiO 2 /Si interface and randomly distributed discrete charge generation centers. [29][30][31] The parameters used in the photon sensor model are given in Table IV.…”
Section: D Emccd Camera Modelmentioning
confidence: 99%
“…Pixels in a hardware photosensor cannot be manufactured exactly the same from perfectly pure materials. There will always be variations in the photo detector area that are spatially uncorrelated [46], surface defects at the SiO 2 /Si interface [47], and discrete randomlydistributed charge generation centres [11]. These defects provide a mechanism for thermally-excited carriers to move between the valence and conduction bands [48,49].…”
Section: Dark Current Fixed Pattern Noisementioning
confidence: 99%