Damping in a superconducting mechanical resonator

Suchoi, Oren; Buks, Eyal

doi:10.1209/0295-5075/117/57008

Cited by 4 publications

(5 citation statements)

References 44 publications

(51 reference statements)

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“…The fitted interaction energy is rather high (one would expect it more around 1 eV), but may likely reflect a non-uniform distribution of the TLS inside the beam [22], which is out of the scope of this study. Note that our expression does not fit the data in the superconducting state between 600 mK and 1 K, which we attribute to the substantial density of quasiparticle excitations in this range, that should contribute to an excess damping through the same mechanism as electrons in the normal state [33]: in fact, above 800 mK the data in both states are identical within experimental accuracy, as observed previously [23]. This shall be addressed elsewhere.…”

mentioning

confidence: 56%

Nanomechanical damping via electron-assisted relaxation of two-level systems

Maillet¹,

Cattiaux²,

Zhou³

et al. 2020

Preprint

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We report on measurements of dissipation and frequency noise at millikelvin temperatures of nanomechanical devices covered with aluminum. A clear excess damping is observed after switching the metallic layer from superconducting to the normal state with a magnetic field. Beyond the standard model of internal tunneling systems coupled to the phonon bath, here we consider the relaxation to the conduction electrons together with the nature of the mechanical dispersion laws for stressed/unstressed devices. With these key ingredients, a model describing the relaxation of two-level systems inside the structure due to interactions with electrons and phonons with well separated timescales captures the data. In addition, we measure an excess 1/f -type frequency noise in the normal state, which further emphasizes the impact of conduction electrons.

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mentioning

confidence: 56%

Nanomechanical damping via electron-assisted relaxation of two-level systems

Maillet¹,

Cattiaux²,

Zhou³

et al. 2020

Preprint

View full text Add to dashboard Cite

show abstract

“…The fitted interaction energy is rather high (one would expect it more around 1 eV), but may likely reflect a nonuniform distribution of the TLS inside the beam [22], which is out of the scope of this study. Note that our expression does not fit the data in the superconducting state between 600 mK and 1 K, which we attribute to the substantial density of quasiparticle excitations in this range, that should contribute to an excess damping through the same mechanism as electrons in the normal state [37]: in fact, above 800 mK the data in both states are identical within experimental accuracy, as observed previously [23]. This shall be addressed elsewhere.…”

Section: Interpretation In the Superconducting Statementioning

confidence: 56%

Nanomechanical damping via electron-assisted relaxation of two-level systems

et al. 2023

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We report on measurements of dissipation and frequency noise at millikelvin temperatures of nanomechanical devices covered with aluminum. A clear excess damping is observed after switching the metallic layer from superconducting to the normal state with a magnetic field. Beyond the standard model of internal tunneling systems coupled to the phonon bath, here we consider the relaxation to the conduction electrons together with the nature of the mechanical dispersion laws for stressed/unstressed devices. With these key ingredients, a model describing the relaxation of two-level systems inside the structure due to interactions with electrons and phonons with well-separated timescales captures the data. In addition, we measure an excess 1/ f -type frequency noise in the normal state, which further emphasizes the impact of conduction electrons.

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“…In addition to the temperature-independent magnetomotive damping, the wide devices demonstrated another temperatureindependent contribution to the damping f c (tabulated in Table I), observed as a finite value of the damping when the normal-state data was extrapolated to zero temperature and zero magnetic field. This temperature-independent contribution could result, for instance, from support losses [46] or electron contributions [47] to the damping.…”

Section: S Nmentioning

confidence: 99%

“…[43], but is in contrast to Refs. [24,30,47], where aluminum is deposited on silicon or silicon nitride. 035409-7 FIG.…”

Section: S Nmentioning

confidence: 99%