2009
DOI: 10.1103/physrevlett.102.257602
|View full text |Cite
|
Sign up to set email alerts
|

Damping by Slow Relaxing Rare Earth Impurities inNi80Fe20

Abstract: Doping Ni80Fe20 by heavy rare earth atoms alters the magnetic relaxation properties of this material drastically. We show that this effect can be well explained by the slow relaxing impurity mechanism. This process is a consequence of the anisotropy of the on site exchange interaction between the 4f magnetic moments and the conduction band. As expected from this model the magnitude of the damping effect scales with the anisotropy of the exchange interaction and increases by an order of magnitude at low tempera… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

8
88
0
1

Year Published

2011
2011
2021
2021

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 135 publications
(98 citation statements)
references
References 20 publications
8
88
0
1
Order By: Relevance
“…Another possible reason of the enhanced damping is that the Pt would act as a dopant into the FeNi films. It is consistent with previous studies 22,23 where heavy-metal dopants in FeNi can increase the damping.…”
supporting
confidence: 82%
“…Another possible reason of the enhanced damping is that the Pt would act as a dopant into the FeNi films. It is consistent with previous studies 22,23 where heavy-metal dopants in FeNi can increase the damping.…”
supporting
confidence: 82%
“…This allows us to study with moderate effort the influence of varying the alloy composition on the damping parameter α. Corresponding work has been done in particular using permalloy as a starting material and adding transition metals (TM) [16] or rare earth metals [17]. Fig.…”
Section: Introductionmentioning
confidence: 99%
“…The damping coefficient can be modified by introducing doping elements including rare earths [4][5][6][7] or transition metal 8,9 elements, with the dopant introduced by co-deposition, usually co-sputtering. A disadvantage of this approach is that the entire material is doped.…”
mentioning
confidence: 99%