2004
DOI: 10.1016/j.cap.2003.10.008
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Damage studies in dry etched textured silicon surfaces

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Cited by 77 publications
(43 citation statements)
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“…These techniques are high cost, low throughputs and some suitable only for relatively large features and not for nanoscale applications. Another method of fabricating 3-D structures is by the surface texturing technique using either dry plasma RIE process (Kumaravelu et al 2004) or wet chemical etching. A 3-D sub-wavelength surface texturing can also be fabricated using interferometric lithography patterning followed by RIE (Chiu et al 2006) but these are used for periodic patterns only.…”
Section: Research Backgroundmentioning
confidence: 99%
“…These techniques are high cost, low throughputs and some suitable only for relatively large features and not for nanoscale applications. Another method of fabricating 3-D structures is by the surface texturing technique using either dry plasma RIE process (Kumaravelu et al 2004) or wet chemical etching. A 3-D sub-wavelength surface texturing can also be fabricated using interferometric lithography patterning followed by RIE (Chiu et al 2006) but these are used for periodic patterns only.…”
Section: Research Backgroundmentioning
confidence: 99%
“…The knowledge of their variation with thin film deposition conditions would allow us to optimise the fabrication parameters. Photoconductance decay [6], surface photo voltage [7], photoluminescence [8], transient microwave reflectance technique [9] and Thin Solid Films 518 (2010) [1767][1768][1769][1770][1771][1772][1773] quasi steady state photo conductance [10] are widely used for characterizing the minority carrier lifetime and diffusion length. Although the number of methods for evaluating SRV and minority carrier lifetime has been reported, specific environment conditions and complex techniques are required in all these methods, which limit the wide application of these techniques.…”
Section: Introductionmentioning
confidence: 99%
“…For example, it was found that significant surface damage is introduced when researchers employ dry etching in nanomaterial syntheses. [126] In another example, in order to fabricate black Si by metal-assisted chemical etching, the randomness of lateral oxidation and the dissolution/re-deposition of metal nanoparticles on the surface due to the redox of the metal can contribute to the atomic-scale roughness of the material's surface. An atomically rough surface is useless for light harvesting and causes more surface defects due to the increase in surface area, which is difficult to passivate and detrimental for carrier collection.…”
Section: Modifying Final Morphologies Of Nanostructuresmentioning
confidence: 99%