Damage profiles in silicon tilt angles bombarded by high energy Cu ions

Abstract

Articles you may be interested inTwodimensional profiling of large tilt angle, low energy boron implanted structure using secondaryion mass spectrometry Secondary ion mass spectrometry depth profiling of boron and antimony deltas in silicon: Comparison of the resolution functions using oxygen bombardment at different energies and impact angles High energy (MeV) Cu ions were implanted into n-type Si samples at angles of 7", 30", 45", and 60". The doses were 5X 1014 and 2X lOI ions/cm*. The damage profiles in Si(100) were investigated by a Rutherford backscattering/channeling technique with 2.1 MeV He ions. The longitudinal damage straggling and lateral damage spread are estimated for 1.0 MeV Cu+ implanted in Si (100). The values obtained are compared with the TRIM (transport of ions in matter) code. The results show that the longitudinal damage straggling is found to be in good agreement with the calculated one within 13% by use of the TRIM code, but the experimental value of the lateral damage spread is higher than the calculated one by about 28% using the TRIM code. The effect of dose rate, energy, and dose on damage distribution is investigated also.