Abstract:Articles you may be interested inTwodimensional profiling of large tilt angle, low energy boron implanted structure using secondaryion mass spectrometry Secondary ion mass spectrometry depth profiling of boron and antimony deltas in silicon: Comparison of the resolution functions using oxygen bombardment at different energies and impact angles High energy (MeV) Cu ions were implanted into n-type Si samples at angles of 7", 30", 45", and 60". The doses were 5X 1014 and 2X lOI ions/cm*. The damage profiles in Si… Show more
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