Damage profiles in alkali halides irradiated with high-energy heavy ions

Kikuchi, Akira; Naramoto, H.; Ozawa, K.; Kazumata, Yukio

doi:10.1016/0168-583x(89)90883-5

Cited by 14 publications

(9 citation statements)

References 11 publications

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“…However, for MeV energy 3 He, 4 He and Au ions a higher by an order of magnitude average absorbed energy (and correspondingly higher fluence) is required. The observed efficiency of light projectiles in modification of structure and properties is in agreement with previous results for irradiations with MeV energy 12 C ions [9]. An advantage of light projectiles is their higher penetration depth compared to heavy ions of the same energy.…”

Section: Discussionsupporting

confidence: 91%

“…Another peculiarity is the formation of extended defects and notable strengthening beyond the range of 3 He and 4 He ions in LiF. A related effect -the appearance of color centers in LiF at the surprisingly high depth (up to 3 mm beyond the range) for irradiations with 12 C ions was reported in [10,11] and for some heavy projectiles was observed in [14]. In the present study, The possible mechanisms of damage beyond the range are still under discussion [14].…”

Section: Discussionmentioning

confidence: 47%

“…The peculiarity of structural damage in LiF under irradiation with some ions ( 12 C, 64 Ni) is the formation of color centers not only in the directly irradiated zone, but also beyond the calculated ion range [10][11][12][13][14]. In order to reveal possible damage effect beyond the range, the damage profiles were studied in an extended depth range.…”

Section: Introductionmentioning

confidence: 99%

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Formation of dislocations in LiF irradiated with 3He and 4He ions

Manika

Zabels

Maniks

et al. 2018

Journal of Nuclear Materials

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Influence of the irradiation with 13.5 MeV 3 He and 5MeV 4 He ions on the micro-structure and mechanical properties of LiF single crystals was studied. The depth profiles of nanoindentation, dislocation mobility, selective chemical etching and photoluminescence served for the characterization of damage. Strong ion-induced increase of hardness and decrease in dislocation mobility at the stage of track overlapping due to accumulation of dislocations and other extended defects was observed. At high fluences (10 15 ions/cm 2) the hardness saturates at about 3.5 GPa (twofold increase in comparison to a virgin crystal) thus confirming high efficiency of light projectiles in modifications of structure and properties. The depth profiles of hardness indicate on a notable contribution of elastic collision mechanism in the damage production at the end-ofrange region. The effects of ion-induced increase of hardness and decrease of dislocation mobility are observed also beyond the ion range and possible mechanisms of such damage are discussed. Highlights  The depth profiles of damage in LiF irradiated with 3 He and 4 He ions were studied.  High-fluence irradiation creates dislocation-rich structure and induces strong hardening.  Changes of LiF structure and properties were observed also beyond the ion range.  Mechanisms of damage beyond the ion range are discussed.

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Section: Discussionsupporting

confidence: 91%

Section: Discussionmentioning

confidence: 47%

Section: Introductionmentioning

confidence: 99%

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Formation of dislocations in LiF irradiated with 3He and 4He ions

Manika

Zabels

Maniks

et al. 2018

Journal of Nuclear Materials

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“…The remarkable effect of hardening is also reported for irradiations with swift (MeV-GeV energy) heavy ions creating track damage [6][7][8]. As shown for LiF crystals as model materials, a complex damage structure is created around the ion path: a several tens of nanometres large halo region consisting mainly of point defects (e.g.…”

Section: Introductionmentioning

confidence: 79%

Swift-ion-induced hardening and reduction of dislocation mobility in LiF crystals

Manika¹,

Maniks²,

Schwartz³

2008

J. Phys. D: Appl. Phys.

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Ion-induced change in Vickers hardness and arm length of dislocation rosettes created by indentation on the (1 0 0) face of LiF crystals was studied. The irradiations were performed using swift U, Bi and Ni ions with a specific energy of 11 MeV per nucleon at fluences between 106 and 1013 ions cm−2. Remarkable effects of the ion-induced hardening and reduction of dislocation arm length were observed above the threshold fluences of about 109–1010 ions cm−2 and 106–107 ions cm−2, respectively. The products of track core damage and aggregates of single defects in the halo of overlapping tracks are responsible for the effects. The results are analysed using the Orowan's model of dislocation impeding by strong obstacles. The advantages of the dislocation mobility method for the diagnostics of track damage at low-fluence irradiations are demonstrated.

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“…X-rays or gamma rays), or heavy ions creates damage to their crystal lattice via the excitation of the electron subsystem. These processes have been studied by numerous groups (see, for example, [1][2][3][4][5][6][7][8]). The main defects are F-centers (an electron at an anion vacancy) and V -centers (a localized hole in the lattice).…”

mentioning

confidence: 98%

Heavy-ion induced modification of lithium fluoride observed by scanning force microscopy

Müller¹,

Neumann²,

Schwartz³

et al. 1998

Applied Physics A: Materials Science & Processing

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In order to study ion-induced damage in single crystals of lithium fluoride with scanning force microscopy (SFM), samples are irradiated with several heavy-ion species with kinetic energy of 11.4 MeV per nucleon. As concluded from a previous analysis of ion tracks in LiF by optical absorption spectroscopy and small-angle X-ray scattering, single point defects occur in a track halo with a radius in the range 15-30 nm, whereas defect aggregates are formed in a track core region possessing a radius of only 1-2 nm. These aggregates can be attacked by chemical etching if the energy loss along the ion trajectory surpasses a critical value of about 1 keV/Å. SFM images of etched as well as unetched sample surfaces reveal new damage characteristics: etched ion-track profiles directed parallel to the ion trajectories exhibit a sequence of single etch pits with an average distance between them of about 140 nm. After exposure to heavy-ion irradiation at normal incidence, the unetched LiF surface is covered with round hillocks with a mean diameter of 55 (8) nm and heights of the order of 3 nm.

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Damage profiles in alkali halides irradiated with high-energy heavy ions

Cited by 14 publications

References 11 publications

Formation of dislocations in LiF irradiated with 3He and 4He ions

Formation of dislocations in LiF irradiated with 3He and 4He ions

Swift-ion-induced hardening and reduction of dislocation mobility in LiF crystals

Heavy-ion induced modification of lithium fluoride observed by scanning force microscopy

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