Damage mechanism of Al–12Al4C3

Besterci, Michal; Ivan, J.; Pešek, Ladislav; Velgosová, Oksana; Hvizdoš, Pavol

doi:10.1016/j.matlet.2003.08.001

Cited by 7 publications

(4 citation statements)

References 4 publications

(3 reference statements)

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“…Usually, the Al 4 C 3 phase is an undesired degradation product which is well known to decrease the mechanical properties of composite materials. 13 Up to the present time, only a few works has referred to its phase or composites synthesis and application, [14][15][16][17] and no work has dig out its huge potential in vacuum microelectronic devices. Although Al 4 C 3 appears only to have passive functions only useful for structural material purposes, [14][15][16][17] it in fact might have huge potential for exhibiting active functionality on FE devices if it's unique crystal structure is fully utilized.…”

Section: Introductionmentioning

confidence: 99%

“…13 Up to the present time, only a few works has referred to its phase or composites synthesis and application, [14][15][16][17] and no work has dig out its huge potential in vacuum microelectronic devices. Although Al 4 C 3 appears only to have passive functions only useful for structural material purposes, [14][15][16][17] it in fact might have huge potential for exhibiting active functionality on FE devices if it's unique crystal structure is fully utilized. There are two characteristic features in Al 4 C 3 structure: One is that the carbon atoms are present in the lattice as discrete carbon anions, C 4À .…”

Section: Introductionmentioning

confidence: 99%

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Field nanoemitter: One-dimension Al4C3 ceramics

et al. 2011

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As a kind of ionic (or salt-like) carbide, Al(4)C(3) hardly any active functions have been found except for structure material purposes. However, considering the unique characteristic features of its crystal structure, we think Al(4)C(3) in fact might have huge potential for exhibiting active functionality on field-emission application. Herein, we report for the first time the catalyst-free synthesis and excellent field emission properties of Al(4)C(3) one-dimension (1-D) nanostructures. The 1-D nanostructures acting as cold electron emitters display excellent field emission performance with the turn-on field as low as 1.4-2.0 V μm(-1) and the threshold field down to 4.2-4.4 V μm(-1). Such emitters are technologically useful, because they can be easily fabricated on large substrates, and the synthesis process is simple and broadly applicable. The findings conceptually provide new opportunities for the application of Al(4)C(3) ceramic material in vacuum microelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Field nanoemitter: One-dimension Al4C3 ceramics

et al. 2011

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“…As an important ceramic material, Al 4 C 3 (ionic carbide) is now known as the only intermediate compound in C−Al system, commonly applied as structure material such as reinforcement in aluminum−matrix composite materials, is mainly fabricated by mechanical alloying. − Usually, the Al 4 C 3 phase is an undesired degradation product that is well-known to be not only brittle, but also highly sensitive to moisture contact and, thus, promote accelerated fatigue crack growth rates . Although Al 4 C 3 appears only to have passive functions only useful for structural material purposes, it in fact might have huge potential for exhibiting active functionality on FE devices if its unique crystal structure is fully utilized.…”

mentioning

confidence: 99%

Carbon-in-Al₄C₃ Nanowire Superstructures for Field Emitters

et al. 2011

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As a kind of ionic (or salt-like) carbide, for Al(4)C(3), hardly any active functions have been found except for structure material purposes. However, considering the unique characteristic features of its crystal structure, we think Al(4)C(3) in fact might have huge potential for exhibiting active functionality on field-emission applications. Herein, we report the feasibility to approach such emitters by creating Al(4)C(3)-based nanowire superstructures. The conductive amorphous carbon (a-C) nanolayers are embedded quasi-periodically in Al(4)C(3) nanowire and generate essential electrical contact to the insulating Al(4)C(3). The superstructures acting as cold electron emitters display excellent field emission performance with the turn-on field as low as 0.65-1.3 V/μm and the threshold field down to 2.1-2.6 V/μm. We speculate that the emission characteristics, which are ever better than carbon nanotubes, are attributed to the unique crystal structure of Al(4)C(3) and the enhanced electrons transport in the nanowires due to the existence of a-C nanolayers. Such emitters are technologically useful, because they can be easily fabricated on large substrates, and the synthesis process is simple and broadly applicable. The findings conceptually provide new opportunities for the application of Al(4)C(3) ceramic material in vacuum microelectronic devices.

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“…Because smaller reinforcements have a better reinforcing effect than larger ones, applying the ball-milling technique for composite fabrications is possible to produce homogeneous Al-Al 4 C 3 nanocomposites powders instead of the more convectional coarse particle-filled composite with poor mechanical properties. Deep studies on Al-Al 4 C 3 system have been carried out which corroborates the good performance of these composites [8][9][10][11].…”

Section: Introductionmentioning

confidence: 63%