Damage induced by CHF3+C2F6 plasma etching on Si-implanted GaAs(100)

Abstract

The damage induced by CHF3+C2F6 plasma etching on GaAs(100) was studied. We exposed GaAs(100) surfaces to various etching conditions and monitored sheet resistance, carrier concentration, and Hall mobility. Significant losses of Hall mobility and carrier concentration, and an increase in sheet resistance were observed only when CHF3 was introduced into the plasma. After annealing at 400 °C for 55 min, sheet resistance was restored nearly to the value obtained before the plasma exposure. We believe that the damage was produced by hydrogen atoms or ions dissociated from CHF3 in the plasma. In contrast to the general belief that plasma etching induces the least damage among dry etching techniques [such as reactive ion etching (RIE) and reactive ion beam etching (RIBE)], our plasma etching damage was comparable to previously reported RIE or RIBE damage.