Damage in the Surface Region of Silicon Produced by Sputter-Etching

Abstract

We study the level spacing distribution p(s) in the spectrum of random networks. According to our numerical results, the shape of p(s) in the Erdős-Rényi (E-R) random graph is determined by the average degree k and p(s) undergoes a dramatic change when k is varied around the critical point of the percolation transition, k = 1. When k 1, the p(s) is described by the statistics of the Gaussian orthogonal ensemble (GOE), one of the major statistical ensembles in Random Matrix Theory, whereas at k = 1 it follows the Poisson level spacing distribution. Closely above the critical point, p(s) can be described in terms of an intermediate distribution between Poisson and the GOE, the Brodydistribution. Furthermore, below the critical point p(s) can be given with the help of the regularized Gamma-function. Motivated by these results, we analyse the behaviour of p(s) in real networks such as the internet, a word association network and a protein-protein interaction network as well. When the giant component of these networks is destroyed in a node deletion process simulating the networks subjected to intentional attack, their level spacing distribution undergoes a similar transition to that of the E-R graph.

High Quality RF‐Sputtered Silicon Dioxide Layers

“…Sputter etching, however, leaves a damaged layer near the surface of the Si and, also, Ar ions are implanted. As shown by Yamamoto (10), with back scattering analysis 20 min annealing in N2 is sufficient to remove the Ar but does not heal out the damage of the Si completely. This agrees with our results.…”