Damage evolution and surface defect segregation in low-energy ion-implanted silicon

Abstract

Boron segregation to extended defects induced by self-ion implantation into silicon

Modeling of Ion Implantation and Diffusion in Si

“…At higher temperatures, interstitial clusters dissolve decreasing the excess of vacancies at the surface. These results can explain the experimental observation of depopulation and repopulation of the Si (111)-7x7 surface at different annealing temperatures [30].…”

“…These results agree with experimental observations on Si (1 11)-7x7 [30]. In these experiments a depopulation of the adatom layer is observed under annealing at 350"C, that could be explained as an arrival of vacancies to the surface from the bulk.…”

Development of liquid-metal-ion source low-energy ion gun/high-temperature ultrahigh vacuum scanning tunneling microscope combined system

“…The STM observations in most of the pioneering works, however, were done not in real time but after ion irradiation. [19][20][21][22] This will obscure some of the physical aspects of single ion-solid interaction. In order to see directly in real time what happens upon ion incidence, we developed an ion-gun/STM combined system ͑IG/STM͒.…”

Toward a predictive atomistic model of ion implantation and dopant diffusion in silicon

“…The dissolution rate of these { 3 11) defects at different temperatures was obtained from these measurements and a link was established between the transient enhanced diffusion observed in Boron and the dissolution of these defects. On the other hand, STM was used to study surface evolution during annealing at different temperatures [7]. These experiments show a decrease in the population of the adatom layer during low temperature annealing and a re-population of this layer when the temperature is increased.…”