D4. Monte Carlo simulation of single electronics based on orthodox theory

Elabd, Ali A.; Shalaby, Abdel-Aziz T.; El-Rabaie, El-Sayed M.

doi:10.1109/nrsc.2012.6208569

Cited by 5 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We could not find a real structure measurement to compare the results to, but we have found them comparable to an identical structure simulated by MUSES [7], which is another Monte-Carlo simulator.…”

Section: Figurementioning

confidence: 79%

Orthodox Theory Monte-Carlo Simulation of Single-Electron Logic Circuits

2019

Informacije MIDEM

View full text Add to dashboard Cite

In the past decades MOS based digital integrated logic circuits have undergone a successful process of miniaturisation eventually leading to dimensions of a few nanometres. With the dimensions in the range of a few atomic radii the end of conventional MOS technology is approaching. Amongst the prospective candidates for sub 10nm logic are integrated logic circuits based on single-electron devices. In our contribution we present the use of MOSES (Monte-Carlo Single-Electronics Simulator) as a method for simulation of complementary single-electron logic circuits based on the orthodox theory. Simulations of single-electron devices including a single-electron box, a single-electron transistor and a complementary single-electron inverter were carried out. Their characteristics were evaluated at different temperatures and compared to measurement results obtained at other institutions. The potential for room-temperature operation was also assessed.

show abstract

Section: Figurementioning

confidence: 79%

Orthodox Theory Monte-Carlo Simulation of Single-Electron Logic Circuits

2019

Informacije MIDEM

View full text Add to dashboard Cite

show abstract

“…The charging energy Ec is acquired on frequent intervals using cosine of the gate bias with R1, R2, and R3. Using the steady-state master equation approach and the "orthodox" theory as our foundation, we derive the model of analysis for a double-junction SET [44], [45], [46]. The steady-state master equations be computed with accuracy using the above-described assumptions.…”

Section: Iiimodeling Of Single Electron Transistormentioning

confidence: 99%

Analytical Modelling and Performance Characterization of Single Electron Transistor

Shruti Suman

2024

jes

View full text Add to dashboard Cite

One important component of the present nanotechnology research field is single electron transistor (SET) which has unrealized quality to operate at breakneck speeds with ultralow power consumption. The single electron transistor is a novel nanoscale switching device that can regulate the motion of a single electron in addition to maintaining its scalability down to the atomic level. In this context, scalability refers to the ability of electronic device to function better as their dimensions get smaller. The basic device properties that this single electron transistor (SET) operates on "quantized current-voltage (I-V) characteristic," "single electron tunneling effect," and "Coulomb blockade," are also covered. This study presents some of the key SET-related topics, such as modelling and simulation methods. Simulation of Nanostructures Method (SIMON) is circuit simulator for tunneling device with just a single electron device based on Monte Carlo approach. It enables simulation of any kind of circuits with voltage source, junctions in tunnels and capacitors in quasi stationary mode and transient mode. The most significant feature of SET that is applied in the research work is Coulomb blockade oscillation, so at the conclusion of this paper, a number of simulations utilizing the SIMON simulator are shown. The simulation results show that for gate capacitance CG = 2af, C∑ = 3af, IBIAS = 2nA, tunnel barrier resistance RT > 4.1KΩ and operating temperature T=21K the model reflects real SET characteristic with maximum voltage gain.

show abstract

“…In this paper, we use a kinetic Monte Carlo (KMC) approach to simulate electronic charge tunneling dynamics within the NP network. Prior research has already demonstrated the effectiveness of the KMC approach for studying single electronics devices (Kirihara et al, 1994;Wasshuber et al, 1997;Lee et al, 2008;Elabd et al, 2012). In particular, configured small networks of 16 nanoparticles to act as any Boolean logic gate.…”

Section: Introductionmentioning

confidence: 99%

A kinetic Monte Carlo approach for Boolean logic functionality in gold nanoparticle networks

Mensing,

van der Wiel,

Heuer

2024

Front. Nanotechnol.

View full text Add to dashboard Cite

Nanoparticles interconnected by insulating organic molecules exhibit nonlinear switching behavior at low temperatures. By assembling these switches into a network and manipulating charge transport dynamics through surrounding electrodes, the network can be reconfigurably functionalized to act as any Boolean logic gate. This work introduces a kinetic Monte Carlo-based simulation tool, applying established principles of single electronics to model charge transport dynamics in nanoparticle networks. We functionalize nanoparticle networks as Boolean logic gates and assess their quality using a fitness function. Based on the definition of fitness, we derive new metrics to quantify essential nonlinear properties of the network, including negative differential resistance and nonlinear separability. These nonlinear properties are crucial not only for functionalizing the network as Boolean logic gates but also when our networks are functionalized for brain-inspired computing applications in the future. We address fundamental questions about the dependence of fitness and nonlinear properties on system size, number of surrounding electrodes, and electrode positioning. We assert the overall benefit of having more electrodes, with proximity to the network’s output being pivotal for functionality and nonlinearity. Additionally, we demonstrate an optimal system size and argue for breaking symmetry in electrode positioning to favor nonlinear properties.

show abstract

D4. Monte Carlo simulation of single electronics based on orthodox theory

Cited by 5 publications

References 11 publications

Orthodox Theory Monte-Carlo Simulation of Single-Electron Logic Circuits

Orthodox Theory Monte-Carlo Simulation of Single-Electron Logic Circuits

Analytical Modelling and Performance Characterization of Single Electron Transistor

A kinetic Monte Carlo approach for Boolean logic functionality in gold nanoparticle networks

Contact Info

Product

Resources

About