D216 Crystal growth of a binary compound semiconductor InAs-GaAs by the Travelling Liquidus Zone method under microgravity conditions

Sugiki, Yoshihiro; Tadokoro, Tomoki; Maekawa, Taira; Matsumoto, Satoshi

doi:10.1299/jsmeptec.2001.0_505

Proceedings of Thermal Engineering Conference

2001

DOI: 10.1299/jsmeptec.2001.0_505

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D216 Crystal growth of a binary compound semiconductor InAs-GaAs by the Travelling Liquidus Zone method under microgravity conditions

Yoshihiro Sugiki

Tomoki Tadokoro

Taira Maekawa

et al.

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D216 Crystal growth of a binary compound semiconductor InAs-GaAs by the Travelling Liquidus Zone method under microgravity conditions

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