D.C. characteristics of silicon p-n junctions at avalanche breakdown including selfheating

Stepowicz, W. J.

doi:10.1016/0038-1101(79)90163-1

Cited by 6 publications

References 9 publications

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Formation of silicon oxide by the low‐temperature process and its application to electron devices

Nomura

Kitamura

Yasukawa

et al. 1990

Electron Comm Jpn Pt II

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The technology of forming silicon oxide film at low temperature was developed and the application of the oxide film to electronic devices was investigated. Silicon oxide was formed by anodic oxidation of silicon at room temperature. The anodic oxide was Si‐rich in the as‐grown state. When the anodic oxide film was annealed at 600°C in hydrogen atmosphere, followed by annealing at 450°C in the same ambient, the film became stoichiometric SiO2 and the SiO2/Si interface condition was improved because of the saturation of the unsaturated Si atoms at the interface. These mechanisms were evaluated by IR, AES, and SIMS analyses. The SiO2/Si interface was investigated by the degree of atomic dimension using TEM. As a result, it was found that the overall interface could be regarded as flat but it had local dents. After annealing, a transition region of one or two atom layers in thickness existed at the interface. It was found that the electrical properties of the annealed anodic oxide were comparable with those of an oxide film grown thermally by the MOS C‐V measurement. The input/output characteristics of an MOSFET with a gate oxide formed by this anodic oxide indicated that the anodic oxide formed at low temperature could be used for electronic devices.

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Formation of silicon oxide by the low‐temperature process and its application to electron devices

Nomura

Kitamura

Yasukawa

et al. 1990

Electron Comm Jpn Pt II

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The electrothermal macromodel of switching voltage regulators from the L4970 family

Górecki

2008

Int J Numerical Modelling

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SUMMARYThe paper concerns the problem of modelling switching voltage regulators from the L4970 family in SPICE with the phenomenon of self-heating taken into account. The way of formulating the electrothermal macromodel of this class of circuits and its form are presented. The correctness of the formulated macromodel is verified experimentally on the example of the regulator L4975 operating in the switching stabilizer with the buck converter.

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Bellia

Saïdane

Benzohra

et al. 2008

Int J Numerical Modelling

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D.C. characteristics of silicon p-n junctions at avalanche breakdown including selfheating

Cited by 6 publications

References 9 publications

Formation of silicon oxide by the low‐temperature process and its application to electron devices

Formation of silicon oxide by the low‐temperature process and its application to electron devices

The electrothermal macromodel of switching voltage regulators from the L4970 family

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