$D$-Band Total Power Radiometer Performance Optimization in an SiGe HBT Technology

Dacquay, E.; Tomkins, A.; Yau, K.H.K.; Laskin, E.; Chevalier, P.; Chantre, A.; Sautreuil, B.

doi:10.1109/tmtt.2012.2184132

Cited by 78 publications

(14 citation statements)

References 14 publications

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“…The circuit consumes 3.75 mW from 2.5 V. Note that the detector in Fig. 3, although independently developed, is similar to that in [10]. Furthermore, considering the scaling in both frequency and technology, also the simulated performances are comparable.…”

Section: Square Law Power Detectormentioning

confidence: 84%

“…However, the cited designs are only focused on ground-based applications such as imaging for security scanners and material analysis. In parallel, several mm-wave square-law power detectors have been published, showing that the integration of this fundamental building block is possible either with SiGe BiCMOS [9,10] or with CMOS [11]. As a consequence of the high scientific and industrial interest around the passive mm-wave imaging, the first SoC mm-wave passive receiver on silicon has been published at the end of the year 2010 [12].…”

Section: Introductionmentioning

confidence: 99%

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SYSTEM-ON-CHIP 36.8 GHZ RADIOMETER FOR SPACE-BASED OBSERVATION OF SOLAR FLARES: FEASIBILITY STUDY IN 0.25 μm SIGE BICMOS TECHNOLOGY

Aluigi¹,

Roselli²,

White³

et al. 2012

PIER

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Abstract-This paper deals with a feasibility study for a System-onChip (SoC) mm-wave radiometer devoted to space-based observation of solar flares and operating in the Ka-band. The radiometer has been designed in 250 nm SiGe BiCMOS process. The circuit integrates a three stages differential LNA with 37.2 dB gain and 4.8 dB noise figure at 36.8 GHz and a differential square-law detector based on HBTs, featuring a 96 mV/µW responsivity. The full radiometer achieves, potentially, a NETD of 0.1 K for 1 s integration time in Dicke mode. This work represents the first study of such an integrated instrument for Ka-band space-based observation of solar flares.

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Section: Square Law Power Detectormentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

SYSTEM-ON-CHIP 36.8 GHZ RADIOMETER FOR SPACE-BASED OBSERVATION OF SOLAR FLARES: FEASIBILITY STUDY IN 0.25 μm SIGE BICMOS TECHNOLOGY

Aluigi¹,

Roselli²,

White³

et al. 2012

PIER

View full text Add to dashboard Cite

show abstract

“…Power detectors with LNAs have been demonstrated in CMOS technology up to W-band [62,63], achieving a noise equivalent power (NEP) as low as 36 fW/ √ H z with around 110 mW DC power consumption [62]. The HBT square-law detectors with an LNA pre-amplification have also been used up to D-band [64][65][66][67] with NEPs as low as 14 fW/ √ H z and a DC power consumption of about 90 mW [67]. Beyond the technology f T /f max , it is no longer possible to design LNAs.…”

Section: Arrays Of Thz Direct Detector In Silicon Technologiesmentioning

confidence: 99%

THz Direct Detector and Heterodyne Receiver Arrays in Silicon Nanoscale Technologies

Grzyb¹,

Pfeiffer²

2015

J Infrared Milli Terahz Waves

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The main scope of this paper is to address various implementation aspects of THz detector arrays in the nanoscale silicon technologies operating at room temperatures. This includes the operation of single detectors, detectors operated in parallel (arrays), and arrays of detectors operated in a video-camera mode with an internal reset to support continuous-wave illumination without the need to synchronize the source with the camera (no lock-in receiver required). A systematic overview of the main advantages and limitations in using silicon technologies for THz applications is given. The on-chip antenna design challenges and co-design aspects with the active circuitry are thoroughly analyzed for broadband detector/receiver operation. A summary of the state-of-the-art arrays of broadband THz direct detectors based on two different operation principles is presented. The first is based on the non-quasistatic resistive mixing process in a MOSFET channel, whereas the other relies on the THz signal rectification by nonlinearity of the base-emitter junction in a high-speed SiGe heterojunction bipolar transistor (HBT) . For the MOSFET detector arrays implemented in a 65 nm bulk CMOS technology, a state-of-the-art optical noise equivalent power (NEP) of 14 pW/ √ H z at 720 GHz was measured, whereas for the HBT detector arrays in a 0.25 μm SiGe process technology, an optical NEP of 47 pW/ √ H z at 700 GHz was found. Based on the implemented 1k-pixel CMOS camera with an average power consumption of 2.5μW/pixel, various design aspects specific to video-mode operation are outlined and co-integration issues with the readout circuitry are analyzed. Furthermore, a single-chip 2 × 2 array of heterodyne receivers for multi-color active imaging in a 160-1000 GHz band is presented with a Janusz Grzyb J Infrared Milli Terahz Waves well-balanced NEP across the operation bandwidth ranging from 0.1 to 0.24 fW/Hz (44.1-47.8 dB single-sideband NF) and an instantaneous IF bandwidth of 10 GHz. In its present implementation, the receiver RF bandwidth is not continuously covered but divided into six bands centered around 165, 330, 495, 660, 820, and 990 GHz.

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“…SiGe radiometer receivers have been demonstrated at W-band [15] and D-band [16] recently, but they have high noise temperatures and do not contain internal calibration sources. This need to be corrected in order to collect high-quality radiometry data.…”

Section: Sige Radiometer-on-chip Developmentmentioning

confidence: 99%

Integrated silicon-germanium electronics for CubeSat-based radiometers

Coen

Piepmeier

Cressler

2013

2013 IEEE International Geoscience and Remote Sensing Symposium - IGARSS

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This paper discusses the motivation for and accomplishments to date in our ongoing effort to develop an integrated G-bandSiGe radiometer for use in large-scale production of remote sensing CubeSats. The constrained nature of these platforms necessitates the use of highly integrated, low-power electronics that are well-suited for large-scale production, assembly, and testing. The high speeds of emerging 4 th -generation SiGe BiCMOS technologies makes these platforms realistic targets for >100 GHz applications for the first time. The high integration level, fabrication economy-of-scale, low 1/f noise, built-in total-dose radiation tolerance, and attractive thermal properties of these technologies make them ideal for this application. Ultra-low noise SiGe LNA designs which show the potential of these technologies for use in high-quality radiometers are presented. Future designs will increase integration levels, with the ultimate goal being a full radiometer-on-a-chip containing calibration sources.

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$D$-Band Total Power Radiometer Performance Optimization in an SiGe HBT Technology

Cited by 78 publications

References 14 publications

SYSTEM-ON-CHIP 36.8 GHZ RADIOMETER FOR SPACE-BASED OBSERVATION OF SOLAR FLARES: FEASIBILITY STUDY IN 0.25 μm SIGE BICMOS TECHNOLOGY

SYSTEM-ON-CHIP 36.8 GHZ RADIOMETER FOR SPACE-BASED OBSERVATION OF SOLAR FLARES: FEASIBILITY STUDY IN 0.25 μm SIGE BICMOS TECHNOLOGY

THz Direct Detector and Heterodyne Receiver Arrays in Silicon Nanoscale Technologies

Integrated silicon-germanium electronics for CubeSat-based radiometers

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