D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz

Wollitzer, M.; Buechler, J.; Schäffler, F.; Luy, J.-F.

doi:10.1049/el:19960088

Cited by 45 publications

(19 citation statements)

References 5 publications

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“…Especially for R S = 0.2 (which is the measured value of R S in 94 GHz DDR [4]), simulation provides P R F = 603.84 mW and η L = 7.10 % which are very much close in agreement with the experimental results [4]. Wollitzer et al [5] and Midford et al [1] reported around 225 and 50 mW RF power outputs from 140 and 220 GHz DDR Si IMPATT oscillators respectively. Present simulation shows that RF power outputs of 140 and 220 GHz DDR Si IMPATTs can vary from 276.65 to 243.28 mW and 209.07 to 169.36 mW respectively for R S values ranging from 0.0 to 0.3 .…”

Section: Effect Of Series Resistancesupporting

confidence: 71%

“…Fig. 10 also show the experimentally measured values of P R F of 94, 140 and 220 GHz DDR IMPATTs [1,4,5]. In the year 1987, Luy et al [4] experimentally obtained peak RF power of 600 mW with 6.7 % efficiency from 94 GHz DDR Si IMPATT oscillators.…”

Section: Effect Of Series Resistancementioning

confidence: 90%

“…From the point of view of most advanced process technology, silicon is the most popular base material for fabricating mm-wave IMPATT diodes [2][3][4][5]. The principle of operation of IMPATT diode and its negative resistance property is based on impact ionization followed by avalanche multiplication and transit time of charge carriers to cross the depletion layer of the device.…”

Section: Introductionmentioning

confidence: 99%

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Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions

Bandyopadhyay¹,

Chakraborty²,

Biswas

et al. 2016

J Comput Electron

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In this paper, we study the effect of energy loss of charge carriers due to carrier-carrier interactions prior to impact ionization on the static and large-signal characteristics of double-drift region impact avalanche transit time (IMPATT) diodes based on Si designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies such as 94, 140, and 220 GHz. The above mentioned effect has been incorporated in the simulation by taking into account a recently reported generalized analytical model of impact ionization rate of charge carriers based on multistage scattering phenomena in the base semiconductor. Results are compared with static and large-signal signal simulation results of the same diodes that we have reported earlier by taking into account the empirical relation of ionization rates fitted from the experimental data (experiment was carried out on IMPATT structures suitable for operating near 100 GHz). It is observed that both the large-signal RF power output and DC to RF conversion efficiency of the diodes are deteriorated significantly due to reduced ionization rates as a consequence of carrier-carrier collision events prior to the impact ionization. This effect is found to be more pronounced in 140 and B Aritra Acharyya ari_besu@yahoo.co.in 220 GHz diodes due to the enhanced carrier-carrier collisions within those diodes having greater background doping densities as compared to 94 GHz diode. The simulation results presented in this paper found to be in closer agreement with the experimental results as compared to the results that we have reported earlier.

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Section: Effect Of Series Resistancesupporting

confidence: 71%

Section: Effect Of Series Resistancementioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

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Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions

Bandyopadhyay¹,

Chakraborty²,

Biswas

et al. 2016

J Comput Electron

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“…Experimentally obtained RF power output from Si DDR IMPATT sources are 600 mW at 94 GHz (Luy et al 1987) and 300 mW at 140 GHz (Wollitzer et al 1996) which are shown in Fig. 12.…”

Section: High-frequency Propertiesmentioning

confidence: 97%

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Acharyya

Banerjee

2012

Appl Nanosci

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In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz-GaN) has been explored for operation at terahertz frequencies. Drift-diffusion model is used to design double-drift region (DDR) IMPATTs based on different materials at millimeter-wave (mm-wave) and terahertz (THz) frequencies. The performance limitations of these devices are studied from the avalanche response times at different mm-wave and THz frequencies. Results show that the upper cut-off frequency limits of GaAs and Si DDR IMPATTs are 220 GHz and 0.5 THz, respectively, whereas the same for InP and 4H-SiC DDR IMPATTs is 1.0 THz. Wz-GaN DDR IMPATTs are found to be excellent candidate for generation of RF power at THz frequencies of the order of 5.0 THz with appreciable DC to RF conversion efficiency. Further, it is observed that up to 1.0 THz, 4H-SiC DDR IMPATTs excel Wz-GaN DDR IMPATTs as regards their RF power outputs. Thus, the wide bandgap semiconductors such as Wz-GaN and 4H-SiC are highly suitable materials for DDR IMPATTs at both mm-wave and THz frequency ranges.

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“…7 at three bias current densities for a fixed voltage modulation (50 %). The reported large-signal results of DDR Si transit time devices at 94, 140 and 220 GHz window frequencies [12] and the corresponding experimental results [17][18][19] are shown in Fig. 7 for the sake of comparison of RF performance of DAR and DDR Si IMPATTs at those frequencies.…”

Section: Comparison Between Simulation and Experimental Results Of Ddmentioning

confidence: 99%

Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

2014

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A large-signal method based on non-sinusoidal voltage excitation model is used to study the DC and RF characteristics of Double Avalanche Region (DAR) Silicon Transit Time diode. A large-signal simulation program based on drift-diffusion model is developed for this study. The simulation results show the existence of several distinct negative conductance bands in the admittance characteristics separated by positive conductance. Thus the DAR device is capable of delivering RF power not only at the design frequency but also at several frequency bands higher than the design frequency band in the mm-wave regime. A comparative study with DDR Si device designed to deliver RF power at a particular mm-wave frequency band shows that DAR Si device is capable of delivering significantly higher RF power not only at the designed mm-wave frequency band, but also at higher frequency bands.

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D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz

Cited by 45 publications

References 5 publications

Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions

Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

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