D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz

Eisele, H.; Haddad, G.I.

doi:10.1049/el:19941354

Cited by 23 publications

(8 citation statements)

References 10 publications

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“…The highest RF output power of 3.7 mW and the corresponding dc-to-RF conversion efficiency of 0.32% were measured at 297.1 GHz. Operation in a second-harmonic mode was confirmed up to at least 328 GHz in a similar way, as in previous experiments [9]. It should be noted that the discrepancy between measured and predicted RF power levels is now less than a factor of three around 300 GHz, whereas measured and predicted dc-to-RF conversion efficiencies agree within less than a factor of two.…”

Section: B -Band Performancesupporting

confidence: 63%

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Submillimeter-Wave InP Gunn Devices

Eisele

Kamoua

2004

IEEE Trans. Microwave Theory Techn.

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Abstract-Recent advances in design and technology significantly improved the performance of low-noise InP Gunn devices in oscillators first at -band (110-170 GHz) and then at -band (75-110 GHz) frequencies. More importantly, they next resulted in orders of magnitude higher RF output power levels above -band and operation in a second-harmonic mode up to at least 325 GHz. Examples of the state-of-the-art performance are continuous-wave RF power levels of more than 30 mW at 193 GHz, more than 3.5 mW at 300 GHz, and more than 2 mW at 315 GHz. The dc power requirements of these oscillators compare favorably with those of RF sources driving frequency multiplier chains to reach the same output RF power levels and frequencies. Two different types of doping profiles, a graded profile and one with a doping notch at the cathode, are prime candidates for operation at submillimeter-wave frequencies. Generation of significant RF power levels from InP Gunn devices with these optimized doping profiles is predicted up to at least 500 GHz and the performance predictions for the two different types of doping profiles are compared.

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Section: B -Band Performancesupporting

confidence: 63%

“…As can be seen from Fig. 1, devices from this epitaxial material yielded state-of-the-art performance both at -and -band frequencies [7], [9]. Likewise, devices on diamond heat sinks whose graded doping profile, as shown : devices on integral heat sinks.…”

Section: A -Band Performancementioning

confidence: 81%

Submillimeter-Wave InP Gunn Devices

Eisele

Kamoua

2004

IEEE Trans. Microwave Theory Techn.

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“…InP Gunn diodes have long been used as high power microwave sources in the important W-band frequency range (75-110 GHz) (see, e.g., [1]), the key attraction being that fundamental-mode operation is relatively straightforward to achieve (unlike with GaAs). Over the last few years, increasing attention has been given to extending fundamental-mode operation up to D-band frequencies (110-170 GHz) [2][3][4], as well as to investigating second-harmonic mode operation [5,6]. The experimental results demonstrated have been impressive, e.g., ∼130 mW output power at ∼130 GHz (with a DC-RF conversion efficiency of ∼2.5%), combined with low phase-noise [3].…”

Section: Introductionmentioning

confidence: 99%

A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

Dunn¹,

Kearney²

2003

Semicond. Sci. Technol.

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InP Gunn diodes are widely used as high power microwave sources in the W-band frequency range (75-110 GHz), but interesting questions remain as to the optimal active region doping profile for such devices. In this paper we carry out a detailed theoretical study, using Monte Carlo simulations, of three types of doping profiles: (i) uniform doping, (ii) graded doping (i.e. increasing linearly from cathode to anode) and (iii) notch doping (a lightly doped region adjacent to the cathode). By studying the effects of varying all the relevant parameters, such as doping levels, active region length, bias levels and temperature, under both DC and RF conditions, we argue that the notch doping approach is superior, offering high performance combined with a greater tolerance to doping fluctuations.

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“…Fabrication technologies for substrateless devices on integral heat sinks or on diamond heat sinks for better heat removal have been developed and described in the literature. Selective etching technologies in the GaAs and InP material systems (17)(18)(19)(20) employ as etch-stop layers latticematched Ga x Al 1-x As (x < 0.4) and In 0.53 Ga 0.47 As layers, respectively. Improved yield, reproducibility, and performance characterize these substrateless devices.…”

Section: Fabrication Technologiesmentioning

confidence: 99%

“…The useful frequency range of the package can be extended to 140 GHz and higher if the alumina ring is replaced by a quartz ring for a lower parasitic capacitance C p . However, new devices for frequencies above 100 GHz are still being developed, and, for research purposes, a low-parasitic open package with two or four standoffs at the highest millimeter-and up to submillimeter-wave frequencies is also often employed (20,21).…”

Section: Fabrication Technologiesmentioning

confidence: 99%

Gunn or Transferred‐Electron Devices

Eisele

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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Transferred‐electron devices are the only microwave devices whose operation is solely based on the bulk‐material properties of semiconductors such as GaAs or InP. These devices are mainly employed in low‐noise medium‐power oscillators up to high millimeter‐wave frequencies. James B. Gunn was the first scientist to observe the underlying physical phenomenon in an experiment and, therefore, these devices are often referred to as Gunn devices. This chapter describes the principles of operation, basic fabrication technologies, and common oscillator circuits for them. Different device structures for performance optimization, optimization procedures, and simulation tools are discussed. The chapter also summarizes the current state of the art of Gunn devices and the outlook covers the prospects of more recent device structures and material systems.

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D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz

Cited by 23 publications

References 10 publications

Submillimeter-Wave InP Gunn Devices

Submillimeter-Wave InP Gunn Devices

A theoretical study of differing active region doping profiles for W-band (75–110 GHz) InP Gunn diodes

Gunn or Transferred‐Electron Devices

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