CZTS thin films on transparent conducting electrodes by electrochemical technique

Sarswat, Prashant K.; Snure, Michael; Free, Michael L.; Tiwari, Ashutosh

doi:10.1016/j.tsf.2011.07.052

Cited by 87 publications

(45 citation statements)

References 16 publications

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“…It demonstrates that all absorbers share a very similar pattern which agrees well with that of tetragonal kesterite CZTS (JCPDS No. 026-0575) with the preferred orientation of CZTS at (112) consistent with the literature [15,16]; the full width at half maximum (FWHM) of the main peak (112) of CZTS has a small dip down from 0.165 • to 0.158 • , then increases by 0.17 • and ends at 0.228 • with increasing the precursor deposition pressure from 5 to 12.5 mTorr. This FWHM trend is consistent with the SEM results as small FWHM reflects large grain size and a low defect level inside the film.…”

Section: Resultssupporting

confidence: 84%

Fabrication of Efficient Cu2ZnSnS4 Solar Cells by Sputtering Single Stoichiometric Target

et al. 2017

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Low cost single stoichiometric target sputtering of Cu 2 ZnSnS 4 (CZTS) precursor has been adopted to fabricate CZTS solar cells. The effect of a series of deposition pressures and deposition durations on the device performance has been investigated. A 3.74% efficient solar cell has been achieved at a base pressure of 1 × 10 −4 Torr with a stoichiometric target, which to the authors' knowledge, is the record efficiency for such a stoichiometric target.

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Section: Resultssupporting

confidence: 84%

Fabrication of Efficient Cu2ZnSnS4 Solar Cells by Sputtering Single Stoichiometric Target

et al. 2017

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“…27,34,35 Surface morphology examination.-Scanning electron micrographs of ordered TiO 2 nanotubes and T-NTA coated with other nanocrystals are shown in Figure 2. For plain T-NTA (Figures 2a, 2b) it can be observed that the inner diameters of the nanotubes are 100∼130 nm, with a wall thickness of ∼10 nm and film at a potential of ∼1.0 V. However during the reverse sweep, a high resistance state was maintained up to ∼ −1.4 V. There is a sudden change in current during the positive direction sweep at this value.…”

Section: Resultsmentioning

confidence: 99%

“…Metallic layers were deposited using an electrolyte containing ions of interest (Cu 2+ , Zn 2+ , and Sn 2+ ). 35 Such films were annealed in an evaporated sulfur environment during continuous supply of argon to obtain CZTS thin film. Other details regarding experiments and film characterizations can be found in earlier reports.…”

Section: Synthesis Of Titania Nanotube Array/titania Nanoparticles (Tmentioning

confidence: 99%

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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The resistive switching behavior of TiO 2 based electronic devices have been extensively investigated the last two decades due to their low cost and potential applications in high speed electronic devices. However, the randomness in switching behavior and uncertainty in conducting filament formation often restricts their usage for long-term applications. A duality in current transport mechanism was observed when nano-architectural parameters of the TiO 2 memory resistance device were altered. TiO 2 nanotube-CZTS nanocrystals based devices exhibit Fowler-Nordheim quantum tunneling, whereas TiO 2 nanocrystals-CZTS thin film based devices exhibit space charge limited conduction. Temperature dependent electrical studies indicate that polaronic transport is one of the phenomena assisting in electrical conduction. Electronic band information suggests that tunneling between CZTS and TiO 2 is indirect. A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of Low cost electrical bistability due to nonlinear conducting behavior has been an exciting area of research in recent years. [1][2][3][4][5][6][7][8] Several new devices such as tunnel diodes, multivibrators, and organic bistable systems have been investigated.1-7 Some of these devices possess unique I-V characteristics and non-conventional current transport mechanisms. Devices showing negative differential resistance (NDR) can be utilized for various low power applications such as radio frequency, logic and neuromorphic devices, fast switching, and high frequency oscillators.1-7,9-11 Materials such as carbon nanotubes, graphene, and conducting polymers have been recently utilized for room temperature NDR behavior or memory resistance applications. [1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .14 Thin film memory resistors offer advantages such as high switching speed and low energy electroforming. The use of thin film TiO 2 in a memory resistor has demonstrated potential dependent on/off switching when sandwiched between two platinum contacts. 15 It is generally believed that a memoresistance effect in TiO 2 nanostructures is based on the mobility of vacancies or defects. [15][16][17] The conduction mechanism is based on the formation and transport of conducting filament (CF). A conducting filament generally consists of oxygen vacancies that form or break due to electric field driven migration. Because of randomness and uncertainty in CF's formation, resistance-switching (RS) devices often perform randomly and thus have less control over operating parameters. Another report suggests that Joule heating is also a major cause for current controlled negative resistance behavior. 18 This behavior relies on polaronic transport in TiO 2 . In polaronic transport, the hopping motion of small polarons up to certain temperatures influences conduction. Several other mechanisms and switching modes such...

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“…Nevertheless for such a buffer layer the optimal composition of the absorber layer seems to be less Znrich (Zn/Sn ∼ 1) [113]. Other architectures were proposed: SLG/Mo/CZTS/a-Si/ITO [114], a superstrate architecture (glass/FTO/CZTS) [115,116], another superstrate (glass/FTO/TiO 2 /In 2 S 3 /CZTS/Mo) [117], a flexible substrate (Al foil/Mo/CZTS/ZnS/i-ZnO/ITO/Al-Ni) [118].…”

Section: Device Propertiesmentioning

confidence: 99%

Kësterite thin films for photovoltaics : a review

2012

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In the years to come, electricity production is bound to increase, and Cu2ZnSn(S, Se)4 (CZTS) compounds, due to their suitability to thin-film solar cells, could be a means to fulfill the demand. After explaining the reasons of the sudden interest of the CIGS scientific community for CZTS solar cells, this paper reviews recent papers published on the subject of kësterites-based solar cells. After a description of crystallographic and optoelectronic properties, including CZTS crystalline structure, defect formation and metal composition, this review paper focuses on CZTS synthesis processes and device properties. Synthesis strategies, including one-or two-step processes, deposition temperature, binary formation control via atmosphere control and their effect on device properties are discussed.

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CZTS thin films on transparent conducting electrodes by electrochemical technique

Cited by 87 publications

References 16 publications

Fabrication of Efficient Cu2ZnSnS4 Solar Cells by Sputtering Single Stoichiometric Target

Fabrication of Efficient Cu2ZnSnS4 Solar Cells by Sputtering Single Stoichiometric Target

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Kësterite thin films for photovoltaics : a review

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CZTS thin films on transparent conducting electrodes by electrochemical technique

Cited by 87 publications

References 16 publications

Fabrication of Efficient Cu2ZnSnS4 Solar Cells by Sputtering Single Stoichiometric Target

Fabrication of Efficient Cu2ZnSnS4 Solar Cells by Sputtering Single Stoichiometric Target

Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4Device

Kësterite thin films for photovoltaics : a review

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Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device