CZTS/CdS: interface properties and band alignment study towards photovoltaic applications

Rondiya, Sachin R.; Rokade, Avinash; Sharma, Priyanka; Chaudhary, Minakshi; Funde, Adinath M.; Jadhav, Yogesh; Haram, Santosh K.; Pathan, Habib M.; Jadkar, Sandesh

doi:10.1007/s10854-017-8365-5

Cited by 27 publications

(19 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…44 Apart from that, Rondiya et al studied complete CV analysis for band edge position with band offset calculations for spike-like CdS/CZTS interface. 45 Additionally, Kaur et al presented CBO variation for different S/(S + Se) ratio 46 and it was found that spike-like offset is present for all the cases of S/(S + Se) ratio 46,47 which justies our spike-like CdS/CZTS interface.…”

Section: A Model Vericationmentioning

confidence: 72%

Boosting the efficiency of single junction kesterite solar cell using Ag mixed Cu₂ZnSnS₄ active layer

Saha

Alam

2018

RSC Adv.

View full text Add to dashboard Cite

show abstract

Section: A Model Vericationmentioning

confidence: 72%

Boosting the efficiency of single junction kesterite solar cell using Ag mixed Cu₂ZnSnS₄ active layer

Saha

Alam

2018

RSC Adv.

View full text Add to dashboard Cite

show abstract

“…Similar to CIGS, CdS and ZnS buffer layers have been used for CZTS solar cells. [471][472][473] However, since CZTS devices have similar interfacial properties but lower efficiency than CIGS, this review does not go into detail and instead refers the reader to other references. 474…”

Section: Cigs Solar Cellsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

View full text Add to dashboard Cite

Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

show abstract

“…The CZGSe sample dispersion and electrode was prepared as per our earlier report. 2,35,36 Typically the working electrode was loaded with CZGSe samples to the cell by drop-casting 200 mL of CZGSe dispersion in 1.0 mg mL À1 ACN followed by vacuum drying. The CV measurements were recorded at a scan rate of 50 mV s À1 .…”

Section: Materials Characterizationmentioning

confidence: 99%

Revealing the electronic structure, heterojunction band offset and alignment of Cu₂ZnGeSe₄: a combined experimental and computational study towards photovoltaic applications

Rondiya

Buldu

Brammertz

et al. 2021

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

CZTS/CdS: interface properties and band alignment study towards photovoltaic applications

Cited by 27 publications

References 30 publications

Boosting the efficiency of single junction kesterite solar cell using Ag mixed Cu₂ZnSnS₄ active layer

Boosting the efficiency of single junction kesterite solar cell using Ag mixed Cu₂ZnSnS₄ active layer

Wide Band Gap Chalcogenide Semiconductors

Revealing the electronic structure, heterojunction band offset and alignment of Cu₂ZnGeSe₄: a combined experimental and computational study towards photovoltaic applications

Contact Info

Product

Resources

About

CZTS/CdS: interface properties and band alignment study towards photovoltaic applications

Cited by 27 publications

References 30 publications

Boosting the efficiency of single junction kesterite solar cell using Ag mixed Cu2ZnSnS4 active layer

Boosting the efficiency of single junction kesterite solar cell using Ag mixed Cu2ZnSnS4 active layer

Wide Band Gap Chalcogenide Semiconductors

Revealing the electronic structure, heterojunction band offset and alignment of Cu2ZnGeSe4: a combined experimental and computational study towards photovoltaic applications

Contact Info

Product

Resources

About

Boosting the efficiency of single junction kesterite solar cell using Ag mixed Cu₂ZnSnS₄ active layer

Boosting the efficiency of single junction kesterite solar cell using Ag mixed Cu₂ZnSnS₄ active layer

Revealing the electronic structure, heterojunction band offset and alignment of Cu₂ZnGeSe₄: a combined experimental and computational study towards photovoltaic applications