Czochralski Growth of Silicon Crystals

Evaluation of oxygen precipitation behavior in n-type Czochralski-Si for photovoltaic by infrared tomography: Effects of carbon concentration and annealing process conditions

“…x is the volume ratio of SiO 2 and Si, that is, the expansion rate of the lattice due to oxygen precipitation, x = 2.25. 34,35) N Si (cm −3 ) is the number of Si atoms at 1 cm −3 , N Si = 5.0 × 10 22 cm −3 . 36) y is the ratio of silicon atoms to oxygen atoms in SiO 2 , y = 2.…”

Fundamentals and engineering of defects

“…In between both defect kinds are minimized due to recombination. The controlling factor proves to be the ratio between growth velocity v and axial temperature gradient G to be in silicon v/G = 1.38 × 10 −3 cm 2 min −1 K −1 [18]. When the experimental v/G values are close to this critical ratio, like in standard Czochralski processes, the crystal contains often both interstitial and vacancy dominated regions at the periphery and center, respectively.…”

Numerical and Experimental Investigation of Germanium Refining via Fractional Crystallization Based Innovative Rotary Cooling Device

“…The growth rate during crystallization can be controlled by the supercooling at the solid/liquid interface as well as by the heat transfer from this interface into the crystal. The heat balance at the interface at one dimension (x) can be formulated according to Equation (3) [15].…”