Cyclotron resonance studies of screening and polaron effects in GaAs-AlGaAs heterostructures

Seidenbusch, W.; Lindemann, G.; Lassnig, R.; Edlinger, J.; Gornik, G.

doi:10.1016/0039-6028(84)90337-6

Cited by 81 publications

(8 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The interaction of charge carriers with optical phonons in quasi-two-dimensional (Q2D) systems has been of considerable interest both experimentally [1][2][3][4][5][6] and theoretically [7][8][9][10][11][12] for several years, since the electronic properties of semiconductors, particularly energy loss mechanisms for hot carriers, are strongly affected by this interaction. For bulk polar materials, the dominant interaction is between the charge carriers and longitudinal optical (LO) phonons [7].…”

mentioning

confidence: 99%

Resonant Magnetopolaron Effects due to Interface Phonons inGaAs/AlGaAsMultiple Quantum Well Structures

et al. 1997

Phys. Rev. Lett.

View full text Add to dashboard Cite

Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs͞Al 0.3 Ga 0.7 As multiple quantum well structures in magnetic field up to 30 T. Large avoided-level-crossing splittings of the CR near the GaAs reststrahlen region, and smaller splittings in the region of the AlAs-like optical phonons of th AlGaAs barriers, are observed. Based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with AlAs-like interface phonons. [S0031-9007(97)

show abstract

mentioning

confidence: 99%

Resonant Magnetopolaron Effects due to Interface Phonons inGaAs/AlGaAsMultiple Quantum Well Structures

et al. 1997

Phys. Rev. Lett.

View full text Add to dashboard Cite

show abstract

“…65,67,69,70,8 ' 1 Cyclotron-resonance measurements was also reported for wide (0.1 -0.3 um) modulation-doped Al^Ga^As graded parabolic quantum wells for electron areal densities n s =10 9 -2.5x10" cm" 2 . 75 A clear dependence of the cyclotron frequency on n, was observed in the extreme quantum limit which was understood in terms of alloy effects.…”

Section: (B) Temperature and Pressure Effectsmentioning

confidence: 78%

Energy-Band Structure: Electron and Hole Effective Masses

Adachi¹

1994

GaAs and Related Materials

View full text Add to dashboard Cite

“…6, up arrows) at an FIR laser photon energy of 10.4 meV. The triangles indicate the calculated positions of free electron CR for each well including the effects of nonparabolicity in a simple two-band model [16,17]. We focus on the widest well sample to compare most directly with sample 1.…”

Section: Optically Detected Resonance Spectroscopymentioning

confidence: 99%

Internal Transitions of Charged Excitons in AlGaAs/GaAs Lateral Fluctuation Quantum Dots

et al. 2004

View full text Add to dashboard Cite

Low temperature measurements of magneto-photoluminescence and optically detected resonance spectroscopy in magnetic fields up to 10 T were carried out on GaAs/Al 0.3 Ga 0.7 As quantum well samples grown by molecular beam epitaxy with lateral fluctuation quantum dots produced by growth interruption. Monolayer fluctuations of the quantum well width form lateral quantum dots for which confinement energies are less than Coulomb correlation energies. Five different width quantum wells (2.8-14.1 nm) were grown in a single sample, doped in the barriers with Si donors to allow for photoluminescence of both excitons and trions. We report studies of the optically detected resonance spectra associated with the ensemble photoluminescence of all of the wells including observation of bound-to-continuum internal transitions of trions, both singlet and triplet, and electron cyclotron resonance for the wider wells, which also show a clear bound-to-bound triplet transition. The latter is forbidden by magnetic translational invariance, but can be seen in these samples because this symmetry is broken by the lateral fluctuations, whose characteristic dimensions are greater than the trion orbit size. The two narrowest wells show strong broad optically detected resonance signals associated with inhomogeneously broadened internal transitions of the strongly correlated trions in the lateral dots. The optically detected resonance signals peak well below the calculated positions of electron cyclotron resonance. As expected for localized carriers and excitons, there is no free electron cyclotron resonance. We also present preliminary measurements of optically detected resonance spectra from a single dot.

show abstract

Cyclotron resonance studies of screening and polaron effects in GaAs-AlGaAs heterostructures

Cited by 81 publications

References 8 publications

Resonant Magnetopolaron Effects due to Interface Phonons inGaAs/AlGaAsMultiple Quantum Well Structures

Resonant Magnetopolaron Effects due to Interface Phonons inGaAs/AlGaAsMultiple Quantum Well Structures

Energy-Band Structure: Electron and Hole Effective Masses

Internal Transitions of Charged Excitons in AlGaAs/GaAs Lateral Fluctuation Quantum Dots

Contact Info

Product

Resources

About