Cyclotron Resonance Spectroscopy

Drachenko, O.; Helm, M.

doi:10.1007/978-3-642-23351-7_10

Cited by 6 publications

(2 citation statements)

References 66 publications

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“…Although the value of 0.172m 0 is recommended for the split-off hole effective mass in [4], the recommendation of this value is aimed just only to satisfy a self-consistency with the Luttinger parameters for the heavy hole and light hole. The heavy hole and light hole effective masses and related Luttinger parameters are usually estimated with the use of a conventional cyclotron resonance method [5][6][7] because the heavy hole and light hole act as carriers. We note that the heavy hole effective mass, light hole effective mass and Luttinger parameters were also estimated and reported using magnetoreflectance [8,9], optical absorption measurements [10,11] and so on [12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Simple and direct estimation method for split-off hole effective mass from Franz–Keldysh oscillations appearing in photoreflectance spectra: a feasibility study using GaAs epitaxial layer structures at room temperature

Takeuchi¹,

Fujiwara²

2021

Semicond. Sci. Technol.

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We investigated the feasibility of directly estimating split-off hole effective mass m so from Franz-Keldysh oscillations using non-destructive and non-invasive photoreflectance spectroscopy. We used an undoped/n-type GaAs epitaxial structure and two GaAs p-i-n diode structures. We observed the phenomenon that Franz-Keldysh oscillations, which originate both the E 0 fundamental transition and from the E 0 + ∆ so transition energy, appear in the photoreflectance spectra at room temperature. Initially, from the electro-optic constant ℏΘ HH of the Franz-Keldysh oscillations originating from the E 0 fundamental transition, we deduced the built-in electric field F in each sample with the use of the relation ℏΘ HH = (e 2 ℏ 2 F 2 /2µ HH ) 1/3 , where the quantity µ HH is the reduced effective mass of the electron and heavy hole. In the next step, we calculated the reduced effective mass µ so of the electron and split-off hole using the relation ℏΘ so = (e 2 ℏ 2 F 2 /2µ so ) 1/3 , where the quantity ℏΘ so is the electro-optic constant of the Franz-Kelysh oscilations from the E 0 + ∆ so transition. Finally, we estimated the split-off hole effective mass m so from the reduced effective mass µ so . The estimated split-off hole effective mass agrees with the reported value obtained experimentally. Thus, we conclude that the split-off hole effective mass is estimatable from analyzing the Franz-Keldysh oscillations in the photoreflectance spectra. We also compare the present hole effective masses to those theoretically known and discuss the appropriateness of the electronic-band calculations.

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Section: Introductionmentioning

confidence: 99%

Simple and direct estimation method for split-off hole effective mass from Franz–Keldysh oscillations appearing in photoreflectance spectra: a feasibility study using GaAs epitaxial layer structures at room temperature

Takeuchi¹,

Fujiwara²

2021

Semicond. Sci. Technol.

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“…The use of cyclotron resonance for the study of semiconductors began in the middle of the last century [1][2][3][4][5]. Since then, the cyclotron resonance has become a powerful tool for studying the structure of semiconductors, allowing investigation of their band structure, mechanisms of charge carriers scattering , the influence of phonon-electron and phonon-hole interactio on their effective masses, and more (see review papers [6][7][8] and the references therein). In recent years, the development of submicron technologies paved way for new methods of preparing low-dimensional semiconductor structures where quantum-size effects play a decisive role [9].…”

Section: Introductionmentioning

confidence: 99%

Single-photon superradiant decay of cyclotron resonance in a p -type single-crystal semiconductor film with cubic structure

Moiseev

Greenberg

2017

Phys. Rev. B

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We study a single-photon superradiance under the conditions of cyclotron resonance in a perfect single-crystal p-type semiconductor film with a cubic structure. We show that the rate of superradiant emission scales as the film area, which allows one to specify the size of the film, at which the probability of a single photon superradiance becomes much greater than the probabilities of other scattering channels. The power of superradiant emission depends only on three fundamental constants: the electron charge qe, the speed of light c, the electron mass me, and on the electric to magnetic field ratio.

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