2001
DOI: 10.1016/s0921-4526(00)00697-9
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Cyclotron resonance on galliumnitride in fields up to 700T generated by explosive driven flux compression

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Cited by 8 publications
(4 citation statements)
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“…Three resonance peaks were revealed in magnetic fields of 90, 270, and 410 T, which gave the effective masses and dispersion of electronic states [17]. This semiconductor is promising for applications in radiation sources.…”
Section: Solid State Physics In Ultrahigh Magnetic Fieldsmentioning
confidence: 94%
“…Three resonance peaks were revealed in magnetic fields of 90, 270, and 410 T, which gave the effective masses and dispersion of electronic states [17]. This semiconductor is promising for applications in radiation sources.…”
Section: Solid State Physics In Ultrahigh Magnetic Fieldsmentioning
confidence: 94%
“…Experiments on InSb and GaAs done using a CO 2 laser (λ ∼ 10 µm, f ∼ 30 THz) and the single turn coil method were reported in 1974 [21]. Recently a CR experiment performed with up to 700 T by means of flux compression has been reported [35]; details of this will be mentioned later.…”
Section: Static Fieldmentioning
confidence: 97%
“…can be satisfied even at room temperature, where τ is the relaxation time of a carrier. A good example of CR of semiconductor measured in an extremely high magnetic field and at the highest frequency is the CR of GaN as shown in figure 14 [35]. This experiment is quite difficult and unique from a technical point of view and appears to be the most successful example in the experiments performed by the flux compression method at the RFNC [26].…”
Section: Esr and Crmentioning
confidence: 99%
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