2012
DOI: 10.1186/1556-276x-7-534
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Cyclotron resonance in HgTe/CdTe-based heterostructures in high magnetic fields

Abstract: Cyclotron resonance study of HgTe/CdTe-based quantum wells with both inverted and normal band structures in quantizing magnetic fields was performed. In semimetallic HgTe quantum wells with inverted band structure, a hole cyclotron resonance line was observed for the first time. In the samples with normal band structure, interband transitions were observed with wide line width due to quantum well width fluctuations. In all samples, impurity-related magnetoabsorption lines were revealed. The obtained results we… Show more

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Cited by 59 publications
(45 citation statements)
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“…To achieve a controllable variation of the carrier density we applied optical doping using the persistent photoconductivity effect well known for HgTe/HgCdTe QWs. 9,33,34 We illuminate the sample by red light emitting diode operating at a wavelength of 630 nm for a time t i resulting in a change of the carrier density (type) which could be restored by heating the sample above T ≈ 150 K. The carrier densities measured for different t i used in the experiments are given in Table I.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…To achieve a controllable variation of the carrier density we applied optical doping using the persistent photoconductivity effect well known for HgTe/HgCdTe QWs. 9,33,34 We illuminate the sample by red light emitting diode operating at a wavelength of 630 nm for a time t i resulting in a change of the carrier density (type) which could be restored by heating the sample above T ≈ 150 K. The carrier densities measured for different t i used in the experiments are given in Table I.…”
Section: Methodsmentioning
confidence: 99%
“…The substantially higher resonance field in 21 nm QWs as well as the observed weak dependence of its position on the electron density correspond to the CR behavior in HgTe/HgCdTe QWs characterized by a nearly parabolic dispersion with large Zeeman splitting. 33,34,[43][44][45][46] …”
Section: Methodsmentioning
confidence: 99%
“…Among the representatives of the latter group, the HgTe-based crystalline structures have attracted particular attention, because they allow one to fabricate two-and three-dimensional topological insulators [7][8][9][10][11][12][13][14][15][16]. In this very system, one can obtain Dirac-like, inverted, and normal energy dispersions without changing the material [7,8,[17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32]. Thus, investigating various electronic properties in HgTe-based quantum wells with different thicknesses one can address similarities and differences in phenomena excited for different types of electron energy spectra.…”
Section: Introductionmentioning
confidence: 99%
“…Как известно, изменять энергию межзонных пере-ходов в структурах с КЯ на основе HgCdTe можно как варьируя толщину ямы, так и изменяя долю Сd в ней [30,31]. Для получения СИ в области 6−14 мкм тол-щина КЯ из чистого HgTe должна составлять несколь-ко нм.…”
Section: результаты и обсуждениеunclassified