Cycloaddition chemistry on germanium(001) surfaces: the adsorption and reaction of cyclopentene and cyclohexene

Lee, Sang Won; Hovis, Jennifer S.; Coulter, Sarah K.; Hamers, Robert J.; Greenlief, C. Michael

doi:10.1016/s0039-6028(00)00622-1

Cited by 50 publications

(63 citation statements)

References 46 publications

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“…The lack of end-bridge geometries on Si-(100) 31,33,34 might suggest that both SEB and PEB configurations must overcome higher thermal barriers to be formed. On the other hand, for the Ge surface, several specific molecules have been found not only to undergo reversible desorption upon thermal annealing 1,6,29 but also to form a thermodynamically favorable product. 8,30,42 Based on those results, it has been proposed that many reactions on Ge(100) are under thermodynamic control, whereas those on Si(100) are under kinetic control.…”

Section: Resultsmentioning

confidence: 99%

“…4,10 It has been shown that the attachment is analogous to chemical reactions in organic chemistry such as pericyclic and nucleophilic/electrophilic reactions. [1][2][3][4][5][6][7][8] However, reaction mechanisms of a semiconductor surface are quite different from those in classic organic chemistry. The majority of reactions of organic molecules on a semiconductor surface occur at or near the dangling bonds of the reconstructed surface.…”

Section: Introductionmentioning

confidence: 99%

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Adsorption and Thermal Stability of Ethylene on Ge(100)

et al. 2004

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We have investigated the adsorption structures and thermal desorption behavior of C 2 H 4 on Ge(100) using scanning tunneling microscopy (STM) and temperature programmed desorption (TPD) under ultrahigh vacuum (UHV). Ethylene molecules adsorb in two distinct bonding geometries: (i) on top of a single Ge-Ge dimer (on-top) and (ii) in a paired end-bridge between two neighboring Ge dimers within the same dimer row (paired end-bridge). Real-time STM images taken during the exposure of C 2 H 4 to Ge(100) show that the on-top configuration dominates over the paired end-bridge confiugration. The TPD measurements show that chemisorbed C 2 H 4 desorbs from Ge(100) nondissociatively with two different desorption features, denoted as R (385 K) and (405 K). Desorption follows first-order kinetics for both states; the desorption energies of the R (385 K) and (405 K) states are 1.05 and 1.15 eV, respectively. These desorption energies are about 0.6 eV lower than those of ethylene on Si(100), indicating that the Ge-C bond is weaker than the Si-C bond. STM measurements carried out after annealing Ge surface at various temperatures indicate that the R and states correspond to the on-top and paired end-bridge configurations, respectively.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Adsorption and Thermal Stability of Ethylene on Ge(100)

et al. 2004

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“…Scanning tunneling microscopy experiments reported a packing density of 67 %, i.e., one in three dimers are left unreacted [18]. This knowledge allowed us to model the structure and bonding of the cycloaddition reaction using Gaussian 98 quantum chemistry calculations with a B3LYP/6-31G* level of modeling [24]. We created a relaxed cyclopentene-passivated silicon surface using the same level of theory as reported in a previous paper [24] and matched the binding energies and bonding data within 0.05 eV.…”

Section: Methodsmentioning

confidence: 99%

“…This knowledge allowed us to model the structure and bonding of the cycloaddition reaction using Gaussian 98 quantum chemistry calculations with a B3LYP/6-31G* level of modeling [24]. We created a relaxed cyclopentene-passivated silicon surface using the same level of theory as reported in a previous paper [24] and matched the binding energies and bonding data within 0.05 eV. The surface was modeled using a small C 21 H 20 cluster each of whose two outermost dimers were allowed to react with a cyclopentene molecule; the inner dimer was passivated with hydrogen atoms.…”

Section: Methodsmentioning

confidence: 99%

A Computational Study of the Sub-monolayer Growth of Pentacene

et al. 2006

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“…In this method, the key is how to decrease the number of nuclei. Recent experiments show that the passivation of dangling bonds on a semiconductor substrate surface by adsorption of organic molecules [2,3] is effective to restrict the nucleation [4]. Using this approach, IBM group recently succeeded in obtaining pentacene thin film crystals of 0.1 mm grain size [4].…”

Section: Introductionmentioning

confidence: 99%