Cycling excitation process for light detection and signal amplification in semiconductors

Liu, Yu-Hsin; Zhang, Alex; Miah, Mohammad Abu Raihan; Hall, D.; Niaz, Ifikhar Ahmad; Yan, Lujiang; Yu, Yugang; Kavrik, Mahmut Sami

doi:10.1117/12.2238585

Cited by 2 publications

(1 citation statement)

References 8 publications

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“…Semiconductor photodetectors with inherent carrier multiplication gain such as avalanche detectors and more recently, detectors with cycling excitation process (CEP) produce high sensitivity in both conventional analog mode and in sub-Geiger mode or Geiger mode [1]- [3]. The latter gives rise to single photon sensitivity and has played an important role in quantum communications, deep space communication, bio-photonic and medical imaging, and LiDAR systems [4]- [8].…”

Section: Introductionmentioning

confidence: 99%

A Physics Based Unified Circuit Model for Single Photon and Analog Detector

Miah

Jiang

2021

IEEE Access

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Photodetectors having an internal carrier multiplication mechanism such as avalanche detectors and recently discovered detectors with cycling excitation process (CEP) have attracted tremendous interests for their high sensitivity and flexibility of being operable in analog, sub-Geiger and Geiger mode. Detection of single or few photons in Geiger mode or sub-Geiger mode is particularly interesting as LiDAR systems are finding a wide range of applications in autonomous driving, augmented and virtual reality, robotics, imaging, sensing, and communications. In this paper, we present a universal detector equivalent circuit model, applicable to all modes of operation, for photodetectors with carrier multiplication gain. The biasdependent gain, bandwidth, as well as gain buildup dynamics are rooted in device physics and translated into an equivalent circuit model that can be readily incorporated into integrated circuit design. The model simulates the characteristics of devices biased below and above breakdown voltage, making seamless transitions between analog, sub-Geiger, and Geiger mode with the same set of parameters directly obtained from the material properties. As a result, circuit designers can choose detectors using different gain medium (e.g. Si, InP, InAlAs) to simulate device effects on system performance. The circuit model is implemented in Orcad PSpice circuit simulator. Its wide applicability is demonstrated by simulating the device in linear, sub-Geiger and Geiger mode with external amplifiers and quenching circuits, as well as the gain-bandwidth product of detectors with a Si and InAlAs gain medium.

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Section: Introductionmentioning

confidence: 99%

A Physics Based Unified Circuit Model for Single Photon and Analog Detector

Miah

Jiang

2021

IEEE Access

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An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

Yan

Zhang

et al. 2017

Applied Physics Letters

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Since impact ionization was observed in semiconductors over half a century ago, avalanche photodiodes (APDs) using impact ionization in a fashion of chain reaction have been the most sensitive semiconductor photodetectors. However, APDs have relatively high excess noise, a limited gain-bandwidth product, and high operation voltage, presenting a need for alternative signal amplification mechanisms of superior properties. As an amplification mechanism, the cycling excitation process (CEP) was recently reported in a silicon p-n junction with subtle control and balance of the impurity levels and profiles. Realizing that CEP effect depends on Auger excitation involving localized states, we made the counter intuitive hypothesis that disordered materials, such as amorphous silicon, with their abundant localized states, can produce strong CEP effects with high gain and speed at low noise, despite their extremely low mobility and large number of defects. Here, we demonstrate an amorphous silicon low noise photodiode with gain-bandwidth product of over 2 THz, based on a very simple structure. This work will impact a wide range of applications involving optical detection because amorphous silicon, as the primary gain medium, is a low-cost, easy-to-process material that can be formed on many kinds of rigid or flexible substrates.

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Cycling excitation process for light detection and signal amplification in semiconductors

Cited by 2 publications

References 8 publications

A Physics Based Unified Circuit Model for Single Photon and Analog Detector

A Physics Based Unified Circuit Model for Single Photon and Analog Detector

An amorphous silicon photodiode with 2 THz gain-bandwidth product based on cycling excitation process

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