CW room-temperature operation of Y-junction semiconductor ring lasers

Hohimer, J. P.; Craft, D. C.; Hadley, G. Ronald; Vawter, G.A.

doi:10.1049/el:19920234

Cited by 17 publications

(4 citation statements)

References 2 publications

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“…Several examples of fabrication and characterization of SRLs have been reported. Different cavity geometries have been proposed, such as circular [2], [3], racetrack [4], [5], square A. Scirè is with the Instituto Mediterraneo de Estudios Avanzados, CSIC-UIB, Campus UIB, E-07071 Palma de Mallorca, Spain.…”

Section: Introductionmentioning

confidence: 99%

“…Digital Object Identifier 10.1109/JQE.2003.817585 [6], [7], and triangular [8], employing various light-guiding mechanisms such as pillbox structures using the "whispering-gallery" effect [2], deep-etched or rib-waveguides [3], [4], shallow-etched ridge waveguides [9], buried heterostructures [10], and recently photonic-wire microcavities [11]. An important feature of the design of such devices is the output coupler, which profoundly influences the operating characteristics of the laser.…”

Section: Introductionmentioning

confidence: 99%

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Operating regimes of gaas-algaas semiconductor ring lasers: experiment and model

Sorel

Giuliani

Scire

et al. 2003

IEEE J. Quantum Electron.

225

190

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Theory and experiments of single-mode ridge waveguide GaAs-AlGaAs semiconductor ring lasers are presented. The lasers are found to operate bidirectionally up to twice the threshold, where unidirectional operation starts. Bidirectional operation reveals that just above threshold, the lasers operate in a regime where the two counterpropagating modes are continuous wave. As the injected current is increased, a new regime appears where the intensities of the two counterpropagating modes undergo alternate sinusoidal oscillations with frequency in the tens of megahertz range. The regime with alternate oscillations was previously observed in ring lasers of the gas and dye type, and it is here reported and investigated in semiconductor ring lasers. A theoretical model based on a mean field approach for the two counterpropagating modes is proposed to study the semiconductor ring laser dynamics. Numerical results are in agreement with the regime sequence experimentally observed when the injected current is increased (i.e., bidirectional continuous-wave, bidirectional with alternate oscillations, unidirectional). The boundaries of the different regimes are studied as a function of the relevant parameters, which turn out to be the pump current and the conservative and dissipative scattering coefficients, responsible for an explicit linear coupling between the two counterpropagating field modes. By a fitting procedure, we obtain good numerical agreement between experiment and theory, and also an estimation for the otherwise unknown scattering parameters.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Operating regimes of gaas-algaas semiconductor ring lasers: experiment and model

Sorel

Giuliani

Scire

et al. 2003

IEEE J. Quantum Electron.

225

190

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show abstract

“…They are promising candidates for wavelength filtering, unidirectional traveling wave operation and multiplexing/ demultiplexing applications [8][9][10][11][12]. Several examples of fabrication of SRLs with different cavity geometries have been reported, such as circular [13,14], racetrack [15,16], square [11,17], and triangular [18].…”

Section: Introductionmentioning

confidence: 99%

InGaAs/GaAs quantum well circular ring lasers fabricated by laser direct writing and pulsed anodic oxidation

Liu

Yuan

2004

Journal of Crystal Growth

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“…The important features in the design of semiconductor ring lasers are strictly related to the full understanding of the physical behaviour of the active ring resonator and the output coupler. Several examples of ring laser fabrication and characterization of the output coupler have been reported in literature [6][7][8][9][10][11][12][13][14][15][16]. Besides the different geometries, a number of experimental studies have been performed to analyse the operation regimes of the semiconductor ring lasers.…”

Section: Introductionmentioning

confidence: 99%

Accurate physical modelling of multi quantum well ring lasers

Leonardis

Passaro

2004

Laser Phys. Lett.

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The aim of this paper is to present a model including the fundamental physical effects of the multi quantum well (MQW) ring laser for the understanding of the optical mode behaviour and the control of the oscillating mode in semiconductor injection ring laser. The fully physical model is derived from a quantum mechanical approach and don't depend on any semiempirical approximation. The ring laser behaviour is related to its physical and technological constraints, as the backscattering effect and ring radius. CW CCW GratingRing laser with output coupler and grating to force the laser unidirectional regime

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CW room-temperature operation of Y-junction semiconductor ring lasers

Cited by 17 publications

References 2 publications

Operating regimes of gaas-algaas semiconductor ring lasers: experiment and model

Operating regimes of gaas-algaas semiconductor ring lasers: experiment and model

InGaAs/GaAs quantum well circular ring lasers fabricated by laser direct writing and pulsed anodic oxidation

Accurate physical modelling of multi quantum well ring lasers

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