CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

Shin, Jae–Heon; Yoo, Byoungseung; Han, Won-Seok; Kwon, O–Kyun; Ju, Young−Gu; Lee, J.-H.

doi:10.1109/lpt.2002.1021959

Cited by 39 publications

(14 citation statements)

References 11 publications

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“…Used VCSELs at wavelength of 1500 nm are fabricated with different technologies [5,6,7,8,9,10,11,12]. VCSEL devices developed using the wafer fusion method have achieved continuous wave at wavelength of 1500 nm at power, threshold voltage and current about 0.65 mW, 2.5 V and 1 mA respectivel [13].…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

Faez

Marjani

2011

IEICE Electron. Express

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Abstract:In the present work, a new structure of vertical cavity surface emitting laser (VCSEL) is designed and simulated. In this structure, InGaAsP is used as the active region which is sandwiched between GaAs/AlGaAs distributed bragg mirror at the top of structure and GaAs/AlAs distributed bragg mirror at the bottom. In this work, the hole etching depth was continued down to the top of lower spacer layer while in the previous work the hole etching depth was only down to top of the upper spacer. In this way, the threshold current decrement of 76.52% and increment the power by 28% from 5 mW to 6.4 mW at bias current of 9 mA was achieved. In this paper, device characteristics such as light power versus electrical current and voltage versus current are simulated and compared with the previous work. Keywords: design, high power, InGaAsP, VCSEL Classification: Optoelectronics, Lasers and quantum electronics, Ultrafast optics, Silicon photonics, Planar lightwave circuits Amann, "Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature," Electron. Lett., vol. 37, pp. 1295Lett., vol. 37, pp. -1296Lett., vol. 37, pp. , 2001 N. Nishiyama, C. Caneau, G. Guryanov, X. S. Liu, M. Hu, and C. E. Zah, "High efficiency long wavelength VCSEL on InP grown by MOCVD," Electron. Lett., vol. 39, pp. 437-439, 2003. [13] A. Karim, J. Piprek, P. Abraham, D. Lofgreen, Y.-J. Chiu, and J. ReferencesE. Bowers, "1.55-um vertical-cavity laser arrays for wavelength-division multiplexing," IEEE

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Section: Introductionmentioning

confidence: 99%

Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

Faez

Marjani

2011

IEICE Electron. Express

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“…1. The homemade VCSEL was fabricated with a one-step low-pressure metal-organic chemical vapor deposition technique [23], [24]. The active region was formed by seven pairs of monolithic strain-compensated InGaAs quantum wells (QWs).…”

Section: Methodsmentioning

confidence: 99%

Beyond-Bandwidth Electrical Pulse Modulation of a TO-Can Packaged VCSEL for 10 Gbit/s Injection-Locked NRZ-to-RZ Transmission

Lin

Chi

Kuo

et al. 2011

J. Lightwave Technol.

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Abstract-The parametric characterization of a nonreturnto-zero (NRZ) to return-to-zero (RZ) data format converter based on the external optical NRZ injection of a TO-46-can packaged vertical-cavity surface-emitting laser (VCSEL) directly modulated by a 10 GHz electrical pulse is demonstrated. The electrical-pulse modulation induced gain switching of the VCSEL is initiated under external optical NRZ data injection that increases the relaxation oscillation frequency of the homemade VCSEL from 2.2 to 7.4 GHz, thereby enabling its electrical modulation bandwidth up to 10 GHz. The external NRZ injection reduces the lasing threshold and enlarges the modulation depth of the VCSEL so that the converted RZ data pulsewidth can be shortened to 27 ps with a slightly increased peak-to-peak negative frequency chirp of 4.3 GHz (corresponding to a chirp parameter of 122 MHz/ps). The chirp and bit error rate (BER) display strong correlations with the injection power and the biased current of the VCSEL. With external injection, the receiving power required for achieving a BER below 10 9 at 10 Gbit/s is 19 5 dBm, and a power penalty of 16 dB is observed when the dc bias of the electrical-pulse modulated VCSEL is decreased by only 10% from the threshold condition.Index Terms-Chirp parameter, data format convertor, injection-locked, return-to-zero (RZ), vertical-cavity surface-emitting laser (VCSEL).

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“…In addition, recently the selective anodic oxidation of AlInN over GaN has been demonstrated [68]. Possible candidates for the realisation of high refractive index contrast DBRs in the 1550 nm telecom wavelength range are the oxides of AlAsSb [69][70][71][72], InAlAs [73][74][75][76][77] and AlInAsP [78], all lattice-matched to InP. However, to our knowledge, no MCLEDs with oxide DBRs of this type have been realised so far.…”

Section: Featurementioning

confidence: 99%

High efficiency planar MCLEDs

Joray¹,

Stanley²,

Ilegems³

2005

Physica Status Solidi (b)

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The physics of microcavities have been a subject of intense study over the past 25 years. This work stimulated a large body of experimental and theoretical work on the optimization of the light extraction properties of light‐emitting diodes. Not only has this led to the current high efficiency microcavity LEDs but also to the high brightness LEDs based on other approaches, which are presently available on the market. An overview of the state of the art of planar semiconductor microcavity LEDs will be presented. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD

Cited by 39 publications

References 11 publications

Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

Beyond-Bandwidth Electrical Pulse Modulation of a TO-Can Packaged VCSEL for 10 Gbit/s Injection-Locked NRZ-to-RZ Transmission

High efficiency planar MCLEDs

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