2014
DOI: 10.1016/j.ceramint.2013.12.140
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CVD synthesis of Al2O3 nanotubular structures using a powder source

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Cited by 7 publications
(3 citation statements)
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“…As shown in Figure 1(d,e), the change in nanowire diameter is unremarkable when the deposition time is increased twofold. This retardation of nanowire growth occurred because of the depletion of the limited ZrCl 4 source, after which the nanocomposites underwent an annealing process [15]. During the annealing process, ZrO 2 nanocrystals on the surface grew and merged via surface diffusion.…”
Section: Resultsmentioning
confidence: 99%
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“…As shown in Figure 1(d,e), the change in nanowire diameter is unremarkable when the deposition time is increased twofold. This retardation of nanowire growth occurred because of the depletion of the limited ZrCl 4 source, after which the nanocomposites underwent an annealing process [15]. During the annealing process, ZrO 2 nanocrystals on the surface grew and merged via surface diffusion.…”
Section: Resultsmentioning
confidence: 99%
“…The FFT image in the inset of Figure 5(b) indicates that the nanocomposites comprise large crystals and that the lattice fringes show a d-spacing of 0.153 nm, corresponding to the (211) plane spacing of tetragonal ZrO 2 . During long deposition, ZrO 2 nanocrystals on the surface coalesce via surface diffusion after source depletion and relatively large-sized crystals are shown [15]. Nevertheless, Figure 5(b) shows that mainly the tetragonal phase appeared and that the monoclinic phase did not appear.…”
Section: Resultsmentioning
confidence: 99%
“…The direct optical transitions at Γ from the valence band maximum (VBM) to the conduction band minimum (CBM) are parity forbidden, so the first strong transitions occur from valence bands 0.81 eV below the VBM [26]. In contrast, Al 2 O 3 with a larger band gap of 8.7 eV [27] is a deep-ultraviolet transparent oxide which is considered as a good passivation layer [28] in the fabrication of optoelectronic devices, and it has been used as a perfect substrate material for films growth [29,30]. However, it is rather difficult for Al 2 O 3 to introduce shallow donor levels because the position of conduction band bottom is relatively high and the donor levels become deep levels.…”
Section: Introductionmentioning
confidence: 99%